Semipolar GaN films on patterned r -plane sapphire obtained by wet chemical etching

Applied Physics Letters

Volumn 96, Issue 23, 2010, Pages

  De Mierry, P ^a   Kriouche, N ^a   Nemoz, M ^a   Chenot, S ^a   Nataf, G ^a  

^a CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

C-FACET; CHEMICAL ETCHING; GAN FILM; OPTICAL QUALITIES; PHOTOLUMINESCENCE MEASUREMENTS; PLANE SAPPHIRE; R-SAPPHIRE; SEMIPOLAR; WET-CHEMICAL ETCHING;

GALLIUM ALLOYS; GALLIUM NITRIDE; WET ETCHING; X RAY DIFFRACTION;

SAPPHIRE;

EID: 77953519145     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3454278     Document Type: Article

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