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Volumn 97, Issue 10, 2010, Pages

Cathodoluminescence of GaInN quantum wells grown on nonpolar a plane GaN: Intense emission from pit facets

(12) Fujan, K J a Feneberg, M a Neuschl, B a Meisch, T a Tischer, I a Thonke, K a Schwaiger, S a Izadi, I a Scholz, F a Lechner, L a Biskupek, J a Kaiser, U a

a UNIVERSITY OF ULM (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE GAN; INTENSE EMISSION; LOW TEMPERATURE PHOTOLUMINESCENCE; LUMINESCENCE SIGNALS; METAL-ORGANIC VAPOR PHASE EPITAXY; NON-POLAR; PLANE SAPPHIRE; QUANTUM WELL; SCANNING AND TRANSMISSION ELECTRON MICROSCOPY; SEMIPOLAR; SURFACE PITS;

CATHODOLUMINESCENCE; EPITAXIAL GROWTH; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; ORGANOMETALLICS; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM ALLOYS;

EID: 77956570049 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3487935 Document Type: Article

Times cited : (15)

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