Eliminating stacking faults in semi-polar GaN by AlN interlayers

Applied Physics Letters

Volumn 99, Issue 2, 2011, Pages

  Dadgar, A ^a   Ravash, R ^a   Veit, P ^a   Schmidt, G ^a   Muller M ^a   Dempewolf, A ^a   Bertram, F ^a   Wieneke, M ^a   Christen, J ^a   Krost, A ^a  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ANNIHILATION MECHANISMS; HETEROEPITAXIAL; LOW TEMPERATURES; NON-POLAR GAN; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SI (113); SI(112);

EPITAXIAL GROWTH; GALLIUM NITRIDE; SEMICONDUCTING SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

STACKING FAULTS;

EID: 79960538456     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3610467     Document Type: Article

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