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Applied Physics Letters

Volumn 93, Issue 11, 2008, Pages

Reduction of stacking fault density in m -plane GaN grown on SiC

(9) Cho, Y S a Sun, Q a Lee, I H a,d Ko, T S a Yerino, C D a Han, J a Kong, B H b Cho, H K b Wang, S c

a Yale University (United States)

b Sungkyunkwan University (South Korea)

c Fairfield Crystal Technology LLC (United States)

d Chonbuk National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; MOSFET DEVICES; SEMICONDUCTING GALLIUM; SILICON CARBIDE; THREE DIMENSIONAL;

ALGAN LAYERS; M-PLANE; STACKING FAULT DENSITY; STACKING FAULTING; THREE-DIMENSIONAL ISLANDS; TRANSMISSION ELECTRON;

STACKING FAULTS;

EID: 52349092420 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2985816 Document Type: Article

Times cited : (60)

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