Optical and electrical properties of (1-101)GaN grown on a 7° off-axis (001)Si substrate

Applied Physics Letters

Volumn 84, Issue 23, 2004, Pages 4717-4719

  Hikosaka, T ^a   Narita, T ^a   Honda, Y ^a   Yamaguchi, M ^a   Sawaki, N ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ATOMIC FORCE MICROSCOPY; CATHODOLUMINESCENCE; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; SEMICONDUCTOR DOPING; SILICONES; SUBSTRATES; SURFACE ROUGHNESS; THERMAL EXPANSION;

AMPHOTERIC DOPING; BAND-EDGE EMISSION; CRYSTAL QUALITY; DISLOCATIONS;

GALLIUM NITRIDE;

EID: 3042587667     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1758300     Document Type: Article

References (20)

1. T. Takeuchi, H. Takeuchi, S. Sota, H. Sakai, H. Amano, and I. Akasaki, Jpn. J. Appl. Phys., Part 2 36, L177 (1997).
2. S. Keller, R. Vetury, G. Parish, S. P. DenBaars, and U. K. Mishra, Appl. Phys. Lett. 78, 3088 (2001).
3. S. Tripathy, R. K. Soni, H. Asahi, K. Iwata, R. Kuroiwa, K. Asami, and S. Gonda, J. Appl. Phys. 85, 8386 (1999).
4. B. A. Haskell, F. Wu, M. D. Craven, S. Matsuda, P. T. Fini, T. Fujii, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, Appl. Phys. Lett. 83, 644 (2003).
5. Y. Honda, Y. Kawaguchi, Y. Ohtake, S. Tanaka, M. Yamaguchi, and N. Sawaki, J. Cryst. Growth 230, 346 (2001).
6. Y. Honda, N. Kameshiro, M. Yamaguchi, and N. Sawaki, J. Crystal Growth 242, 82 (2002); N. Sawaki, in Vacuum Science and Technology: Nitrides as Seen by the Technology 2002, edited by T. Paskova and B. Monemar (Research Sigpost, Trivandrum, India, 2002), p. 243.
7. Y. Honda, N. Kameshiro, M. Yamaguchi, and N. Sawaki, J. Crystal Growth 242, 82 (2002); N. Sawaki, in Vacuum Science and Technology: Nitrides as Seen by the Technology 2002, edited by T. Paskova and B. Monemar (Research Sigpost, Trivandrum, India, 2002), p. 243.
8. T. Shibata, H. Sone, K. Yahashi, M. Yamaguchi, K. Hiramatsu, N. Sawaki, and N. Itoh, J. Cryst. Growth 189, 67 (1998).
9. A. Usui, H. Sunakawa, A. Sakai, and A. Yamaguchi, Jpn. J. Appl. Phys., Part 2 36, L899 (1997).
10. C. Wetzel, S. Fisher, J. Krueger, E. E. Haller, R. J. Molner, T. D. Moustakas, E. N. Mokhov, H. Amano, and I. Akasaki, Appl. Phys. Lett. 68, 2556 (1996).
11. W. Rieger, R. Dimitrov, D. Brunner, E. Rohrer, O. Ambacher, and M. Stutzmann, Phys. Rev. B 54, 17596 (1996).
12. Y. Honda, T. Ishikawa, Y. Nishimura, M. Yamaguchi, and N. Sawaki, Phys. Status Solid C 0, 107 (2002).
13. Y. J. Sun, O. Brandt, U. Jahn, T. Y. Liu, A. Trampert, S. Cronenberg, S. Dhar, and K. Ploog, J. Appl. Phys. 92, 5714 (2002).
14. S. Tanaka, T. Hikosaka, Y. Honda, and N. Sawaki (private communications).
15. S. Fisher, C. Wetzel, E. E. Haller, and B. K. Meyer, Appl. Phys. Lett. 67, 1298 (1995).
16. M. A. Reshchikov, D. Huang, F. Yun, P. Visconti, L. He, H. Morkoc, J. Jasinski, Z. Liliental-Weber, S. S. Park, and K. Y. Lee, J. Appl. Phys. 94, 5623 (2003).
17. Y. Kuroiwa, Y. Honda, and N. Sawaki, Physica E (Amsterdam) 21, 787 (2004).
18. D. J. As, D. Schikora, A. Greiner, M. Lubbers, J. Mimkes, and K. Lischka, Phys. Rev. B 54, R11118 (1996).
19. T. Yamamoto and H. K. Yoshida, Physica B 273, 113 (1999).
20. P. Kozodoy, Y. P. Smorchkova, M. Hansen, H. Xing, S. P. DenBaars, U. K. Mishra, A. W. Saxler, R. Perrin, and W. C. Mitchel, Appl. Phys. Lett. 75, 2444 (1999).