SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 95, Issue 7, 2009, Pages

InGaN laser diodes with 50 mW output power emitting at 515 nm

(7) Avramescu, Adrian a Lermer, Teresa a Müller, Jens a Tautz, Sönke a Queren, D́siŕe a Lutgen, Stephan a Strau, Uwe a

a OSRAM OPTO SEMICONDUCTORS GMBH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; AT-WAVELENGTH; DEFECT REDUCTION; DIRECT GREEN; ELECTRO-OPTICAL MEASUREMENTS; EMITTING LAYER; INGAN LASER DIODES; INGAN QUANTUM WELLS; LASER OPERATIONS; LASER STRUCTURES; LASER TEMPERATURES; MICROMETER-SCALE; MW OUTPUT; NONRADIATIVE DEFECTS; OPTICAL OUTPUT; PHOTOLUMINESCENCE MAPPING; PULSE OPERATION; ROOM TEMPERATURE; SLOPE EFFICIENCIES;

EPITAXIAL GROWTH; EPITAXIAL LAYERS; GALLIUM ALLOYS; GALLIUM NITRIDE; LASERS; LIGHT TRANSMISSION; OPTICAL DATA PROCESSING; QUANTUM WELL LASERS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS;

PULSED LASER APPLICATIONS;

EID: 69249161823 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3206739 Document Type: Article

Times cited : (116)

References (10)

1
- 42149116250
- 0277-786X, 10.1117/12.764404
- T. Miyoshi, T. Yanamoto, T. Kozaki, S. Nagahama, Y. Narukawa, M. Sano, T. Yamada, and T. Mukai, Proc. SPIE 0277-786X 6894, 689414 (2008). 10.1117/12.764404
- (2008) Proc. SPIE , vol.6894 , pp. 689414
- Miyoshi, T.¹ Yanamoto, T.² Kozaki, T.³ Nagahama, S.⁴ Narukawa, Y.⁵ Sano, M.⁶ Yamada, T.⁷ Mukai, T.⁸

2
- 61349183692
- 0003-6951, 10.1063/1.3089573
- D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, and U. Strau, Appl. Phys. Lett. 0003-6951 94, 081119 (2009). 10.1063/1.3089573
- (2009) Appl. Phys. Lett. , vol.94 , pp. 081119
- Queren, D.¹ Avramescu, A.² Brüderl, G.³ Breidenassel, A.⁴ Schillgalies, M.⁵ Lutgen, S.⁶ Strau, U.⁷

3
- 60749118125
- 0003-6951, 10.1063/1.3078818
- K. Okamoto, J. Kashiwagi, T. Tanaka, and M. Kubota, Appl. Phys. Lett. 0003-6951 94, 071105 (2009). 10.1063/1.3078818
- (2009) Appl. Phys. Lett. , vol.94 , pp. 071105
- Okamoto, K.¹ Kashiwagi, J.² Tanaka, T.³ Kubota, M.⁴

4
- 67949092890
- 1882-0778, 10.1143/APEX.2.062201
- T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S. Nagahama, and T. Mukai, Appl. Phys. Express 1882-0778 2, 062201 (2009). 10.1143/APEX.2.062201
- (2009) Appl. Phys. Express , vol.2 , pp. 062201
- Miyoshi, T.¹ Masui, S.² Okada, T.³ Yanamoto, T.⁴ Kozaki, T.⁵ Nagahama, S.⁶ Mukai, T.⁷

5
- 67649272897
- 1610-1634, 10.1002/pssc.200778554
- M. Peter, A. Laubsch, P. Stauss, A. Walter, J. Baur, and B. Hahn, Phys. Status Solidi C 1610-1634 5, 2050 (2008). 10.1002/pssc.200778554
- (2008) Phys. Status Solidi C , vol.5 , pp. 2050
- Peter, M.¹ Laubsch, A.² Stauss, P.³ Walter, A.⁴ Baur, J.⁵ Hahn, B.⁶

6
- 65749110875
- 0022-0248, 10.1016/j.jcrysgro.2009.01.066
- D. Queren, M. Schillgalies, A. Avramescu, G. Brüderl, A. Laubsch, S. Lutgen, and U. Strau, J. Cryst. Growth 0022-0248 311, 2933 (2009). 10.1016/j.jcrysgro.2009.01.066
- (2009) J. Cryst. Growth , vol.311 , pp. 2933
- Queren, D.¹ Schillgalies, M.² Avramescu, A.³ Brüderl, G.⁴ Laubsch, A.⁵ Lutgen, S.⁶ Strau, U.⁷

7
- 19944431893
- Growth modes in heteroepitaxy of InGaN on GaN
- DOI 10.1063/1.1823581, 013707
- R. A. Oliver, M. J. Kappers, C. J. Humphreys, and G. A. D. Briggs, J. Appl. Phys. 0021-8979 97, 013707 (2005). 10.1063/1.1823581 (Pubitemid 40183139)
- (2005) Journal of Applied Physics , vol.97 , Issue.1 , pp. 0137071-0137078
- Oliver, R.A.¹ Kappers, M.J.² Humphreys, C.J.³ Briggs, G.A.D.⁴

8
- 0042842387
- 0003-6951, 10.1063/1.1588370
- D. I. Florescu, S. M. Ting, J. C. Ramer, D. S. Lee, V. N. Merai, A. Parkeh, D. Lu, E. A. Armour, and L. Chernyak, Appl. Phys. Lett. 0003-6951 83, 33 (2003). 10.1063/1.1588370
- (2003) Appl. Phys. Lett. , vol.83 , pp. 33
- Florescu, D.I.¹ Ting, S.M.² Ramer, J.C.³ Lee, D.S.⁴ Merai, V.N.⁵ Parkeh, A.⁶ Lu, D.⁷ Armour, E.A.⁸ Chernyak, L.⁹

9
- 35348972407
- High-performance blue InGaN laser diodes with single-quantum-well active layers
- DOI 10.1109/LPT.2007.905215
- H. Ryu, K. Ha, S. Lee, T. Jang, J. Son, H. Paek, Y. Sung, H. Kim, K. Kim, O. Nam, Y. Park, and J. Shim, IEEE Photonics Technol. Lett. 1041-1135 19, 1717 (2007). 10.1109/LPT.2007.905215 (Pubitemid 47595665)
- (2007) IEEE Photonics Technology Letters , vol.19 , Issue.21 , pp. 1717-1719
- Ryu, H.Y.¹ Ha, K.H.² Lee, S.N.³ Jang, T.⁴ Son, J.K.⁵ Paek, H.S.⁶ Sung, Y.J.⁷ Kim, H.K.⁸ Kim, K.S.⁹ Nam, O.H.¹⁰ Park, Y.J.¹¹ Shim, J.I.¹²

10
- 33646731134
- High-power and wide wavelength range GaN-based laser diodes
- DOI 10.1117/12.641460, Novel In-Plane Semiconductor Lasers V
- T. Kozaki, H. Matsumura, Y. Sugimoto, S. Nagahama, and T. Mukai, Proc. SPIE 0277-786X 6133, 613306 (2006). 10.1117/12.641460 (Pubitemid 43751950)
- (2006) Proceedings of SPIE - The International Society for Optical Engineering , vol.6133 , pp. 613306
- Kozaki, T.¹ Matsumura, H.² Sugimoto, Y.³ Nagahama, S.-I.⁴ Mukai, T.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.