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Volumn 326, Issue 1, 2011, Pages 98-102

Optimal activation condition of nonpolar a-plane p-type GaN layers grown on r-plane sapphire substrates by MOCVD

(7) Son, Ji Su a,b Kwang, Hyeon Baik a Yong, Gon Seo a Song, Hooyoung a Ji, Hoon Kim a Hwang, Sung Min a Kim, Tae Geun b

a Korea Electronic Technology Institute (KETI) (South Korea)

b Korea University (South Korea)

Author keywords

A1. Activation; A1. Ambient; A3. MOCVD; B1. a plane p type GaN; B2. Hole concentration

Indexed keywords

A-PLANE; A-PLANE GAN; A1. ACTIVATION; A1. AMBIENT; ACTIVATION CONDITIONS; AIR AMBIENT; B2. HOLE CONCENTRATION; CONVENTIONAL FURNACE ANNEALING; GAS AMBIENTS; MG-DOPED; MG-DOPING; NON-POLAR; OFF-AXIS; OPTIMAL CONDITIONS; P-TYPE ACTIVATION; P-TYPE GAN; SAPPHIRE SUBSTRATES;

EPITAXIAL GROWTH; HOLE CONCENTRATION; NITROGEN; OPTICAL PROPERTIES; OPTIMIZATION; RAPID THERMAL ANNEALING; SAPPHIRE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING;

GALLIUM NITRIDE;

EID: 79960192235 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2011.01.061 Document Type: Conference Paper

Times cited : (3)

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