Polychromatic light emission from single InGaN quantum wells grown on pyramidal GaN facets

Applied Physics Letters

Volumn 87, Issue 13, 2005, Pages 1-3

  Srinivasan, S ^a   Stevens, M ^a   Ponce, F A ^a   Mukai, T ^b  

^a ARIZONA STATE UNIVERSITY   (United States)

^b NICHIA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE FACETS; GAN FACETS; LUMINESCENCE BAND; WAVELENGTH;

CATHODOLUMINESCENCE; CHROMATES; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; LIGHT EMISSION; LIGHT EMITTING DIODES; SEMICONDUCTING INDIUM COMPOUNDS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 28344452826     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2067693     Document Type: Article

References (8)

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2. J. Y. Tsao, IEEE Circuits Devices Mag. 20, 28 (2004).
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