Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied by submicron beam x-ray diffraction

Applied Physics Letters

Volumn 92, Issue 12, 2008, Pages

  Bonanno, P L ^a   O'Malley, S M ^a   Sirenko, A A ^a   Kazimirov, A ^b   Cai, Z H ^c   Wunderer, T ^d   Bruckner P ^d   Scholz, F ^d  

^a NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^b Department of Obstetrics Gynecology   (United States)

^c ARGONNE NATIONAL LABORATORY   (United States)

^d UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHY; DIELECTRIC MATERIALS; METALLORGANIC VAPOR PHASE EPITAXY; SYNCHROTRON RADIATION; X RAY DIFFRACTION ANALYSIS;

CRYSTALLOGRAPHIC PLANES; INTRAFACET MIGRATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 41349099159     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2901142     Document Type: Article

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