510-515nm InGaN-Based green laser diodes on c-plane gan substrate

Applied Physics Express

Volumn 2, Issue 6, 2009, Pages

  Miyoshi, Takashi ^a   Masui, Shingo ^a   Okada, Takeshi ^a   Yanamoto, Tomoya ^a   Kozaki, Tokuya ^a   Nagahama, Shin Ichi ^a   Mukai, Takashi ^a  

^a NICHIA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS-WAVE OPERATIONS; CW OPERATION; FREESTANDING GAN SUBSTRATES; GAN SUBSTRATE; GREEN LASER; GROWTH CONDITIONS; METALORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL OUTPUT POWER; THRESHOLD CURRENTS;

ELECTRIC POTENTIAL; EPITAXIAL GROWTH; EPITAXIAL LAYERS; GALLIUM NITRIDE; LADDER NETWORKS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; SEMICONDUCTING GALLIUM; SUBSTRATES;

GALLIUM ALLOYS;

EID: 67949092890     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.2.062201     Document Type: Article

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