Growth of semipolar (112̄2) GaN layer by controlling anisotropic growth rates in r-plane patterned sapphire substrate

Applied Physics Express

Volumn 2, Issue 9, 2009, Pages

  Okada, Narihito ^a   Kurisu, Akihiro ^a   Murakami, Kazuma ^a   Tadatomo, Kazuyuki ^a  

^a YAMAGUCHI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC GROWTH; GAN LAYERS; GROWTH CONDITIONS; MASK LESS; NON-POLAR; PATTERNED SAPPHIRE SUBSTRATE; PATTERNED SUBSTRATES; PLANE SAPPHIRE; SEMIPOLAR;

ANISOTROPY; CORUNDUM; GALLIUM NITRIDE; SAPPHIRE; SEMICONDUCTING GALLIUM; SUBSTRATES;

GALLIUM ALLOYS;

EID: 70349112567     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.2.091001     Document Type: Article

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