Flat (112̄0) GaN thin film on precisely offset-controlled (11̄02) sapphire substrate

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 10, 2005, Pages 7418-7420

  Imura, Masataka ^a   Hoshino, Akira ^a   Nakano, Kiyotaka ^a   Tsuda, Michinobu ^a,b   Iwaya, Motoaki ^a   Kamiyama, Satoshi ^a   Amano, Hiroshi ^a   Akasaki, Isamu ^a  

^a MEIJO UNIVERSITY   (Japan)

^b KYOCERA CORPORATION   (Japan)

Author keywords

a GaN; AlN; GaN; Nonpolar; Offset; r sapphire

Indexed keywords

ALUMINUM NITRIDE; CRYSTALLINE MATERIALS; METALLORGANIC VAPOR PHASE EPITAXY; SAPPHIRE; THIN FILMS;

A-GAN; NANOPOLAR; R-SAPPHIRE;

GALLIUM NITRIDE;

EID: 31644449260     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.7418     Document Type: Article

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