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Applied Physics Letters

Volumn 97, Issue 14, 2010, Pages

Semipolar single component GaN on planar high index Si(11h) substrates

(4) Ravash, Roghaiyeh a Blaesing, Juergen a Dadgar, Armin a Krost, Alois a

a OTTO VON GUERICKE UNIVERSITY (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GAN LAYERS; HIGH INDEX; INCLINATION ANGLES; METAL-ORGANIC VAPOR PHASE EPITAXY; NATURALLY OCCURRING; ORIENTED GROWTH; SEMIPOLAR; SI (1 1 1); SI (113); SI(112); SINGLE COMPONENTS; SURFACE NORMALS; TILT-ANGLE;

CRYSTALLITES; EPITAXIAL GROWTH; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; ORGANOMETALLICS; SCANNING ELECTRON MICROSCOPY; SILICON;

GALLIUM ALLOYS;

EID: 77958034779 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3492835 Document Type: Article

Times cited : (20)

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