Growth mechanism of nonpolar and semipolar GaN layers from sapphire sidewalls on various maskless patterned sapphire substrates

Japanese Journal of Applied Physics

Volumn 50, Issue 3, 2011, Pages

  Okada, Narihito ^a   Oshita, Hiroyasu ^a   Kurisu, Akihiro ^a   Tadatomo, Kazuyuki ^a  

^a YAMAGUCHI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GAN BUFFER LAYERS; GAN LAYERS; GROWTH CONDITIONS; GROWTH MECHANISMS; GROWTH WINDOW; LOW TEMPERATURES; MASK LESS; NON-POLAR; PATTERNED SAPPHIRE SUBSTRATE; SELECTIVE AREA GROWTH; SEMIPOLAR;

ATOMIC FORCE MICROSCOPY; BUFFER LAYERS; NUCLEATION; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

GALLIUM NITRIDE;

EID: 79953113871     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.035602     Document Type: Article

References (28)

1. A. Tyagi, Y. D. Lin, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura: Appl. Phys. Express 1 (2008) 091103.
2. K. Kojima, M. Funato, Y. Kawakami, S. Masui, S. Nagahama, and T. Mukai: Appl. Phys. Lett. 91 (2007) 251107.
3. Y. Yoshizumi, M. Adachi, Y. Enya, T. Kyono, S. Tokuyama, T. Sumitomo, K. Akita, T. Ikegami, M. Ueno, K. Katayama, and T. Nakamura: Appl. Phys. Express 2 (2009) 092101.
4. K. Motoki, T. Okahisa, R. Hirota, S. Nakahata, K. Uematsu, and N. Matsumoto: J. Cryst. Growth 305 (2007) 377.
5. F. Kawamura, H. Umeda, M. Morishita, M. Kawahara, M. Yoshimura, Y. Mori, T. Sasaki, and Y. Kitaoka: Jpn. J. Appl. Phys. 45 (2006) L1136.
6. F. Kawamura, M. Tanpo, N. Miyoshi, M. Imade, M. Yoshimura, Y. Mori, Y. Kitaoka, and T. Sasaki: J. Cryst. Growth 311 (2009) 3019.
7. R. Dwilinski, R. Doradzinski, J. Garczynski, L. P. Sierzputowski, A. Puchalski, Y. Kanbara, K. Yagi, H. Minakuchi, and H. Hayashi: J. Cryst. Growth 310 (2008) 3911.
8. R. Dwilinski, R. Doradzinski, J. Garczynski, L. P. Sierzputowski, M. Zajac, and M. Rudzinski: J. Cryst. Growth 311 (2009) 3058.
9. M. Imade, S. Kobayashi, F. Kawamura, M. Yoshimura, Y. Mori, and T. Sasaki: Jpn. J. Appl. Phys. 43 (2004) L486.
10. Y. Honda, N. Kameshiro, M. Yamaguchi, and N. Sawaki: J. Cryst. Growth 242 (2002) 82.
11. T. Tanikawa, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki: Phys. Status Solidi C 5 (2008) 2966.
12. T. Tanikawa, D. Rudlph, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki: J. Cryst. Growth 310 (2008) 4999.
13. A. Watanabe, T. Takeuchi, K. Hirosawa, H. Amano, K. Hiramatsu, and I. Akasaki: J. Cryst. Growth 128 (1993) 391.
14. A. Dadgar, J. Bläsing, A. Diez, A. Alam, M. Heuken, and A. Krost: Jpn. J. Appl. Phys. 39 (2000) L1183.
15. Y. Kuroiwa, Y. Honda, and N. Sawaki: Physica E 21 (2004) 787.
16. N. Okada, Y. Kawashima, and K. Tadatomo: Appl. Phys. Express 1 (2008) 111101.
17. N. Okada, Y. Kawashima, and K. Tadatomo: Phys. Status Solidi A 206 (2009) 1164.
18. B. A. Haskell, T. J. Baker, M. B. McLaurin, F. Wu, P. T. Fini, S. P. DenBaars, J. S. Speck, and S. Nakamura: Appl. Phys. Lett. 86 (2005) 111917.
19. T. Gühne, Z. Bougrioua, P. Vennéguès, and M. Leroux: J. Appl. Phys. 101 (2007) 113101.
20. K. Okuno, Y. Saito, S. Boyama, N. Nakada, S. Nitta, R. G. Tohmon, Y. Ushida, and N. Shibata: Appl. Phys. Express 2 (2009) 031002.
21. N. Okada, H. Kurisu, and K. Tadatomo: Appl. Phys. Express 2 (2009) 091001.
22. S. Schwaiger, I. Argut, T. Wunderer, R. Rösch, F. Lipski, J. Biskupek, U. Kaiser, and F. Scholz: Appl. Phys. Lett. 96 (2010) 231905.
23. P. de Mierry, N. Kriouche, M. Nemoz, S. Chenot, and G. Nataf: Appl. Phys. Lett. 96 (2010) 231918.
24. K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi: Jpn. J. Appl. Phys. 40 (2001) L583.
25. K. Hiramatsu, K. Nishiyama, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda: Phys. Status Solidi A 176 (1999) 535.
26. K. Hoshino, N. Yanagita, M. Araki, and K. Tadatomo: J. Cryst. Growth 298 (2007) 232.
27. R. Armitage and H. Hirayama: Appl. Phys. Lett. 92 (2008) 092121.
28. T. J. Baker, B. A. Haskell, F. Wu, J. S. Speck, and S. Nakamura: Jpn. J. Appl. Phys. 45 (2006) L154.