Nonpolar m- and a-plane GaN thin films grown on γ-LiAlO2 substrates

Journal of Crystal Growth

Volumn 311, Issue 12, 2009, Pages 3285-3288

  Zou, Jun ^a,b   Xiang, Weidong ^a  

^a WENZHOU UNIVERSITY   (China)

^b Zhejiang Gemcore Technologies Co Ltd   (China)

Author keywords

A1. Optical properties; A3. MOCVD; B1. LiAlO2; B2. GaN layer

Indexed keywords

A-PLANE GAN; A1. OPTICAL PROPERTIES; A3. MOCVD; B1. LIALO2; B2. GAN LAYER; CRYSTALLINITY; GAN FILM; GAN LAYERS; HIGH QUALITY; LAYER THICKNESS; NON-POLAR; RAMAN SPECTRA; ROOT MEAN SQUARE; X RAY ROCKING CURVE;

CHEMICAL VAPOR DEPOSITION; GALLIUM NITRIDE; LITHIUM ALLOYS; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM; SUBSTRATES;

GALLIUM ALLOYS;

EID: 66049096453     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.03.015     Document Type: Article

References (32)

1. Nishida T., and Kobayashi N. Phys. Status Solidi A 188 (2001) 113
2. Nakamura S., Fasol G., and Pearton S.J. The Blue Laser Diode (2000), Springer, New York
3. Eastman L.F., and Mishra U.K. IEEB Spectrum 39 (2002) 28
4. Waltereit P., Brandt O., Trampert A., Grahn H.T., Menniger J., Ramsteiner M., Reiche M., and Ploog K.H. Nature (London) 406 (2000) 865
5. Craven M.D., Waltereit P., Wu F., Speck J.S., and DenBaars S.P. Jpn. J. Appl. Phys. Pt. 2 42 (2003) L235
6. Ng H.M. Appl. Phys. Lett. 80 (2002) 4369
7. Chitnis A., Chen C., Adivarahan V., Shatalov M., Kuokstis E., Mandavilli V., Yang J., and Khan M.A. Appl. Phys. Lett. 84 (2004) 3663
8. Ke X., Jun X., Peizhen D., Yongzong Z., Guoqing Z., Rongsheng Q., and Zujie F. J. Crystal Growth 193 (1998) 127
9. Sun Y.J., Brandt O., Jahn U., Liu T.Y., Trampert A., Cronenberg S., Dhar S., and Ploog K.H. J. Appl. Phys. 92 (2002) 5714
10. Kong J.Y., Zhang R., Zhang Y., Liu C.X., Xie Z.L., Liu B., Zhu S.N., Min N.B., and Zheng Y.D. J. Rare Earth 25 suppl. (2007) 356
11. Sun Y.J., Brandt O., Cronenberg S., Dhar S., Trampert H.T., Ploog K.H., Waltereit P., and Sperk J.S. Phys. Rev. B 67 (2003) 041306R
12. Gerlach J.W., Hofmann A., Hoche T., Frost F., Rauschenbach B., and Benndorf G. Appl. Phys. Lett. 88 (2006) 011902
13. Lo I., Hsieh C.-H., Hsu Y.-C., Pang W.-Y., and Chou M.-C. Appl. Phys. Lett. 94 (2009) 062105
14. Dikme Y., van Gemmern P., Chai B., Hill D., Szymakowski A., Kalisch H., Heuken M., and Jansen R.H. Phys. Status Solidi C 2 (2005) 2161
15. Chou M.M.C., Hang D.R., Kalisch H., Jansen R.H., Dikme Y., Heuken M., and Yablonskii G.P. J. Appl. Phys. 101 (2007) 103106
16. Liu B., Zhang R., Xie Z.L., Liu C.X., Kong J.Y., Yao J., Liu Q.J., Zhang Z., Fu D.Y., Xiu X.Q., Lu H., Chen P., Han P., Gu S.L., Shi Y., Zheng Y.D., Zou J., and Zhou S.M. Appl. Phys. Lett. 91 (2007) 253506
17. Liu B., Zhang R., Xie Z.L., Kong J.Y., Yao J., Liu Q.J., Zhang Z., Fu D.Y., Xiu X.Q., Chen P., Han P., Shi Y., Zheng Y.D., Zhou S.M., and Edwards G. Appl. Phys. Lett. 92 (2008) 261906
18. Lei T., Ludwig K.F., and Moustakas T.D. J. Appl. Phys. 74 7 (1993) 4430
19. Sasaki T., and Zembutsu S. J. Appl. Phys. 61 7 (1987) 2533
20. Zou J., Zhou S.M., Xu J., Zhang L.H., Xie Z.L., Han P., and Zhang R. J. Appl. Phys. 98 (2005) 084909
21. Zou J., Zhou S.M., Peng G.L., Yang W.Q., Li S.Z., Zhou G.Q., Xu J., and Zhang R. Acta Opt. Sin. 25 07 (2005) 949
22. Zou J., Zhou S.M., Peng G.L., Zhou G.Q., and Xu J. J. Chin. Cera. Soc. 33 05 (2005) 564
23. Zou J., Zhang L.H., Zhou S.M., Xu J., Han P., and Zhang R. Acta Phys. Sin. 54 09 (2005) 4279
24. Zou J., Peng G.L., Chen J.H., Chen X.B., Li S.Z., Yang W.Q., Zhou G.Q., Xu J., and Zhou S.M. J. Synth. Cryst. 33 06 (2005) 922
25. Zou J., Peng G.L., Chen J.H., Li S.Z., Yang W.Q., Zhou G.Q., Xu J., and Zhou S.M. J. Synth. Cryst. 33 06 (2005) 987
26. Amano H., Sawaki N., Akasaki I., and Toyoda. Y. Appl. Phys. Lett. 48 (1986) 353
27. Liu C.X., Xie Z.L., Han P., Liu B., Li L., Zou J., Zhou S.M., Bai L.H., Chen Z.H., Zhang R., and Zhou Y.D. J. Crystal Growth 298 (2007) 228
28. Zou J., Dong Y.M., Zhou S.M., Sun Y., Jun W., Zhou J.H., Huang T.H., Yang S.B., and Zhou H.Q. J. Crystal Growth 294 (2006) 339
29. Kisielowski C., Kruger J., Ruvimov S., Suski T., Ager III J.w., Jones E., Liliental-Weber Z., Rubin M., Weber E.R., Bremser M.D., and Davis R.F. Phys. Rev. B 54 (1996) 17745
30. Davydov V.Y., Kitaev Y.E., Goncharuk I.N., Smirnov A.N., Graul J., Semchinova O., Uffmann D., Smirnov M.B., Mirgorodshy A.P., and Evarestov R.A. Phys. Rev. B 58 (1998) 12899
31. Paskova T., Darakchieva V., Paskov P.P., Birch J., Valcheva E., Persson P.O.A., Arnaudov B., Tungasmitta S., and Monemar B. J. Crystal Growth 281 (2005) 55
32. Wang H., Chen C., Gong Z., Gaevski M., Su M., Yang J., and Asif Kahn M. Appl. Phys. Lett. 84 (2004) 499