Characteristics of the improved a-plane GaN films grown on r-plane sapphire with two-step AlN buffer layer

Journal of Crystal Growth

Volumn 307, Issue 1, 2007, Pages 35-39

  Yan, J F ^a   Guo, L W ^a   Zhang, J ^a   Zhu, X L ^a   Ding, G J ^a   Xing, Z G ^a   Zhou, Z T ^a   Pei, X J ^a   Wang, Y ^a   Jia, H Q ^a   Chen, H ^a   Zhou, J M ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

A1. Atomic force microscopy; A1. High resolution X ray diffraction; A3. Metal organic chemical vapor deposition; B1. AlN buffer; B1. Nitrides; B2. Semiconducting gallium compounds

Indexed keywords

ALUMINUM COMPOUNDS; ATOMIC FORCE MICROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; SEMICONDUCTING GALLIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

HIGH RESOLUTION X-RAY DIFFRACTION; ROOT MEAN SQUARE (RMS) ROUGHNESS;

METALLIC FILMS;

EID: 34548127803     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.06.019     Document Type: Article

References (23)

1. Nakamura S., Senoh M., and Mukai T. Jpn. J. Appl. Phys. 30 (1991) L1708
2. Asif Khan M., Bhattarai A., Kuznia J.N., and Oison D.T. Appl. Phys. Lett. 63 (1993) 1214
3. Nakamura S., Fasol G., and Pearton S.J. The Blue Laser Diode (2000), Springer, New York
4. Morkoc H., Strite S., Gao G..B., Lin M.E., Sverdlov B., and Burns M. J. Appl. Phys. 76 (1994) 1363
5. Seo I.J., Kollmer H., Off J., Sohumer A., Scholz F., and Hangleiter A. Phys. Rev. B 57 (1998) R9435
6. Langer R., Simon J., Ortiz V., Pelekanos N.T., Barsk A., Andre R., and Godlewski M. Appl. Phys. Lett. 74 (1999) 3827
7. Lefebvre P., Movel A., Gallart M., Taliercio T., Allegre J., Gil B., Mathieu H., Damilano B., Grandjean N., and Massies J. Appl. Phys. Lett. 78 (2001) 1252
8. Takeuchi T., Wetzl C., Yamaguchi S., Sakai H., Amano H., Akasaki I., Kaneko Y., Nakagawa S., Yamooka Y., and Yamada N. Appl. Phys. Lett. 73 (1998) 1691
9. Bernardini F., and Fiorentini V. Phys. Rev. B 57 (1998) 9427
10. Cingolani R., Botchkarev A., Tang H., Morkoç H., Traetta G., Coli G., Lomascolo M., Di Carlo A., Della Sala F., and Lugli P. Phys. Rev. B 61 (2000) 2711
11. Waltereit P., Brandt O., Trampert A., Grahn H.T., Memiger J., Ramsteiner M., Reiche M., and Ploog K.H. Nature (London) 406 (2000) 865
12. Sun Y.J., Brandt O., Cronenberg S., Dhar S., Grahn H.T., Ploog K.H., Waltereit P., and Speck J.S. Phys. Rev. B 67 (2003) 041306
13. Craven M.D., Lim S.H., Wu F., Speak J.S., and Denbaars S.P. Appl. Phys. Lett. 81 (2002) 469
14. Chen C.Q., Gaevski M.E., Sun W.H., Kuokstis E., Zhang J.P., Fareed R.S.Q., Wang H.M., Yang J.W., Simin G., Khan M.A., Maruska H.-P., Hill D.W., Chou M.M.C., and Chai B. Appl. Phys. Lett. 81 (2004) 3194
15. Haskell B.A., Chakraborty A., Wu F., Sasano H., Fini P.T., DenBaars S.P., Speck J.S., and Nakamura S. J. Electron. Mater. 34 (2005) 357
16. Haskell B.A., Baker T.J., McLaurin M.B., Wu F., Fini P.T., DenBaars S.P., Speck J.S., and Nakamura S. Appl. Phys. Lett. 86 (2005) 111917
17. Ng H.M. Appl. Phys. Lett. 80 (2002) 4369
18. Ni X., Fu Y., Moon Y.T., Biyikli N., and Morkoç H. J. Crystal Growth 290 (2006) 166
19. Haskell B.A., Wu F., Matsuda S., Craven M.D., Fini P.T., DenBaars S.P., Speck J.S., and Nakamura S. Appl. Phys. Lett. 83 (2003) 1554
20. Li D.S., Chen H., Yu H.B., Han Y.J., Zheng X.H., Huang Q., and Zhou J.M. J. Crystal Growth 263 (2004) 76
21. Yu H.B., Chen H., Li D.S., Han Y.J., Zheng X.H., Huang Q., and Zhou J.M. J. Crystal Growth 263 (2004) 94
22. Li D.S., Chen H., Yu H.B., Zheng X.H., Huang Q., and Zhou J.M. J. Crystal Growth 265 (2004) 107
23. Chichibu S., Azuhata T., Sota T., and Nakamura S. J. Appl. Phys. 79 (1996) 2784