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Volumn 2, Issue 4, 2009, Pages 0410021-0410023
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Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN
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Author keywords
[No Author keywords available]
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Indexed keywords
BASAL PLANES;
INGAN QUANTUM WELLS;
MISFIT DISLOCATIONS;
MISFIT STRAIN RELAXATIONS;
NON-POLAR;
STRUCTURAL AND OPTICAL PROPERTIES;
THIN-FILM STRUCTURES;
BURGERS VECTOR;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
LATTICE MISMATCH;
MOSFET DEVICES;
OPTICAL PROPERTIES;
SEMICONDUCTING GALLIUM;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR QUANTUM WELLS;
SEMICONDUCTOR QUANTUM WIRES;
STRAIN CONTROL;
STRAIN RELAXATION;
WELLS;
STACKING FAULTS;
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EID: 64749095963
PISSN: 18820778
EISSN: 18820786
Source Type: Journal
DOI: 10.1143/APEX.2.041002 Document Type: Article |
Times cited : (34)
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References (22)
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