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Volumn 2, Issue 4, 2009, Pages 0410021-0410023

Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN

Author keywords

[No Author keywords available]

Indexed keywords

BASAL PLANES; INGAN QUANTUM WELLS; MISFIT DISLOCATIONS; MISFIT STRAIN RELAXATIONS; NON-POLAR; STRUCTURAL AND OPTICAL PROPERTIES; THIN-FILM STRUCTURES;

EID: 64749095963     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.2.041002     Document Type: Article
Times cited : (34)

References (22)
  • 14
    • 85119724327 scopus 로고    scopus 로고
    • Phys. Status Solidi: Rapid
    • K. C. Kim et al.: Phys. Status Solidi: Rapid Res. Lett. 1 (2007) 125.
    • (2007) Res. Lett , vol.1 , pp. 125
    • Kim, K.C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.