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Applied Physics Letters

Volumn 95, Issue 23, 2009, Pages

Improving microstructural quality of semipolar (11 2-2) GaN on m -plane sapphire by a two-step growth process

(5) Sun, Qian a Leung, Benjamin a Yerino, Christopher D a Zhang, Yu a Han, Jung a

a Yale University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH PRESSURE; INGAN/GAN QUANTUM WELL; ISLANDING; LOW PRESSURES; M-PLANE; MICRO-STRUCTURAL; OFF-AXIS; OPTICAL OUTPUT; RECOVERY PROCESS; SEMIPOLAR; TWO-STEP GROWTH; X RAY ROCKING CURVE;

COALESCENCE; CORUNDUM; GALLIUM ALLOYS; SAPPHIRE; SEMICONDUCTING GALLIUM; STACKING FAULTS;

GALLIUM NITRIDE;

EID: 71949118680 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3269605 Document Type: Article

Times cited : (79)

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