Oxide bipolar electronics: Materials, devices and circuits

Journal of Physics D: Applied Physics

Volumn 49, Issue 21, 2016, Pages

  Grundmann, Marius ^a   Klüpfel, Fabian ^a   Karsthof, Robert ^a   Schlupp, Peter ^a   Schein, Friedrich Leonhard ^a   Splith, Daniel ^a   Yang, Chang ^a   Bitter, Sofie ^a   Von Wenckstern, Holger ^a  

^a UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

bipolar; diodes; heterostructure; JFET; oxides; transistors

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; COBALT COMPOUNDS; DIODES; HETEROJUNCTIONS; II-VI SEMICONDUCTORS; JUNCTION GATE FIELD EFFECT TRANSISTORS; METALS; MOS DEVICES; NICKEL OXIDE; OSCILLATORS (ELECTRONIC); OXIDE SEMICONDUCTORS; OXIDES; SEMICONDUCTOR DIODES; THIN FILM DEVICES; TIMING CIRCUITS; TRANSISTORS; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

BIPOLAR; BIPOLAR DEVICE; HETEROJUNCTION DIODES; HIGH-PERFORMANCE TECHNOLOGIES; JUNCTION FIELD EFFECT TRANSISTORS; METAL OXIDE SEMICONDUCTOR; PERFORMANCE OPTIMIZATIONS; RING OSCILLATOR;

TIN OXIDES;

EID: 84970021766     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/49/21/213001     Document Type: Article

References (261)

1. Wilson A H 1939 Semi-conductors and Metals (Cambridge: Cambridge University Press)
2. Wilson A H 1931 The theory of electronic semiconductors Proc. R. Soc. A 133 458-91
3. Peierls R 1930 Zur Theorie der elektrischen und thermischen Leitfähigkeit von Metallen Ann. Phys. 396 121-48
4. Morris P R 1990 A History of the World Semiconductor Industry (IEE History of Technology Series vol 12) (London: Peter Peregrinus Ltd)
5. Grundmann M 2016 The Physics of Semiconductors, An Introduction including Nanophysics and Applications 3rd edn (Berlin: Springer)
6. Feng Z C (ed) 2012 Handbook of Zinc Oxide and Related Materials, vol 1 Materials (Boca Raton, FL: CRC Press)
7. Feng Z C (ed) 2012 Handbook of Zinc Oxide and Related Materials, vol 2 Devices and Nano-Engineering (Boca Raton, FL: CRC Press)
8. Higashiwaki M, Sasaki K, Kamimura T, Wong M H, Krishnamurthy D, Kuramata A, Masui T and Yamakoshi S 2013 Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (0 1 0) substrates and temperature dependence of their device characteristics Appl. Phys. Lett. 103 123511
9. Sturm C, Furthmüller J, Bechstedt F, Schmidt-Grund R and Grundmann M 2015 Dielectric tensor of monoclinic Ga2O3 single crystals in the spectral range 0.5-8.5 eV APL Mater. 3 106106
10. Kranert C, Lenzner J, Jenderka M, Lorenz M, von Wenckstern H, Schmidt-Grund R and Grundmann M 2014 Lattice parameters and Raman-active phonon modes of (InxGa1-x)2O3 for x < 0.4 J. Appl. Phys. 116 013505
11. Schmidt-Grund R, Kranert C, Böntgen T, von Wenckstern H, Krauß H and Grundmann M 2014 Dielectric function in the NIR-VUV spectral range of (InxGa1-x)2O3 thin films J. Appl. Phys. 116 053510
12. Kranert C, Jenderka M, Lenzner J, Lorenz M, von Wenckstern H, Schmidt-Grund R and Grundmann M 2015 Lattice parameters and Raman-active phonon modes of β-(AlxGa1-x)2O3 J. Appl. Phys. 117 125703
13. Schmidt-Grund R, Kranert C, von Wenckstern H, Zviagin V and Grundmann M 2015 Dielectric function in the spectral range (0.5-8.5) eV of an (AlxGa1-x)2O3 thin film with continuous composition spread J. Appl. Phys. 117 165307
14. Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M and Hosono H 2004 Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors Nature 432 488-92
15. Ohta H and Hosono H 2004 Transparent oxide optoelectronics Mater. Today 7 42
16. Hosono H 2006 Ionic amorphous oxide semiconductors: material design, carrier transport, and device application J. Non-Cryst. Solids 352 851-8
17. Hosono H 2007 Recent progress in transparent oxide semiconductors: Materials and device application Thin Solid Films 515 6000
18. Grundmann M, Frenzel H, Lajn A, Lorenz M, Schein F and von Wenckstern H 2010 Transparent Semiconducting Oxides: Materials and Devices Phys. Status Solidi a 207 1437-49
19. Frenzel H, Lajn A and Grundmann M 2013 One decade of fully transparent oxide thin film transistors: fabrication, performance and stability Phys. Status Solidi RRL 7 605-15
20. Lee M-J et al 2007 A low-temperature-grown oxide diode as a new switch element for high-density, nonvolatile memories Adv. Mater. 19 73-6
21. Choi Y-S, Kang J-W, Hwang D-K and Park S-J 2009 Recent advances in ZnO-based light-emitting diodes IEEE Trans. Electron Dev. 57 26-41
22. Fan J C, Chang S L and Xie Z 2013 ZnO-based light-emitting diodes Optoelectronics - Advanced Materials and Devices ed S L Pyshkin and J M Ballato (Rijeka: InTech) pp 25-58
23. Amini M N, Dixit H, Saniz R, Lamoen D and Partoens B 2014 The origin of p-type conductivity in ZnM2O4 (M = Co, Rh, Ir) spinels Phys. Chem. Chem. Phys. 16 2588-96
24. Walsh A, Da Silva J L F and Wei S-H 2011 Multi-component transparent conducting oxides: progress in materials modelling J. Phys.: Condens. Matter 23 334210-12
25. Schleife A, Fuchs F, Rodl C, Furthmüller J and Bechstedt F 2009 Branch-point energies and band discontinuities of III-nitrides and III-/II-oxides from quasiparticle band-structure calculations Appl. Phys. Lett. 94 012104
26. Robertson J, Gillen R and Clark S J 2012 Advances in understanding of transparent conducting oxides Thin Solid Films 520 3714-20
27. Hosono H 2010 Recent Progress in Transparent Electronics ed A Facchetti and T Marks (New York: Wiley) chapter 2
28. Klein A 2015 Energy band alignment in chalcogenide thin film solar cells from photoelectron spectroscopy J. Phys.: Condens. Matter 27 134201
29. Kawade D, Chichibu S F and Mutsumi S 2014 Experimental determination of band offsets of NiO-based thin film heterojunctions J. Appl. Phys. 116 163108
30. Grätzel M 2011 Photoelectrochemical cells Nature 414 338-44
31. Dixit H, Saniz R, Cottenier S, Lamoen D and Partoens B 2012 Electronic structure of transparent oxides with the Tran-Blaha modified Becke-Johnson potential J. Phys. D: Condens. Matter 24 205503
32. Jagadish C and Pearton S (ed) 2006 Zinc Oxide Bulk, Thin Films and Nanostructures - Processing, Properties and Applications (Amsterdam: Elsevier)
33. Morkoç H and Özgür Ü 2009 Zinc Oxide: Fundamentals, Materials and Device Technology (Berlin: Wiley)
34. Litton C W, Reynolds D C and Collins T C (ed) 2011 Zinc Oxide Materials for Electronic and Optoelectronic Device Applications (New York: Wiley)
35. Feng Z C (ed) 2012 Handbook of Zinc Oxide and Related Materials, vol 1 Materials (Boca Raton, FL: CRC Press)
36. Feng Z C (ed) 2012 Handbook of Zinc Oxide and Related Materials, vol 2 Devices and Nano-Engineering (Boca Raton, FL: CRC Press)
37. Willander M (ed) 2014 Zinc Oxide Nanostructures: Advances and Applications (Singapore: Pan Stanford Publishing)
38. Ellmer K, Klein A and Rech B (ed) 2008 Transparent Conductive Zinc Oxide - Basics and Applications in Thin Film Solar Cells (Berlin: Springer)
39. Ohshima E, Ogino H, Niikura I, Maeda K, Sato M, Ito M and Fukuda T 2004 Growth of the 2-in-size bulk ZnO single crystals by the hydrothermal method J. Cryst. Growth 260 166-70
40. von Wenckstern H, Schmidt H, Hanisch C, Brandt M, Czekalla C, Benndorf G, Biehne G, Rahm A, Hochmuth H, Lorenz M and Grundmann M 2007 Homoepitaxy of ZnO by Pulsed-Laser Deposition Phys. Status Solidi RRL 1 129-31
41. Kaidashev E M et al 2003 High electron mobility of epitaxial ZnO thin films on c-plane sapphire grown by multistep pulsed-laser deposition Appl. Phys. Lett. 82 3901-3
42. Fan J C, Sreekanth K M, Xie Z, Chang S L and Rao K V 2013 p-Type ZnO materials: theory, growth, properties and devices Prog. Mater. Sci. 58 874-985
43. Reynolds J G and Reynolds C L 2014 Progress in ZnO Acceptor Doping: What Is the Best Strategy? Adv. Condens. Matter Phys. 2014 457058
44. von Wenckstern H, Schmidt-Grund R, Bundesmann C, Müller A, Dietrich C P, Stölzel M, Lange M and Grundmann M 2012 The (Mg,Zn)O alloy Handbook of Zinc Oxide and Related Materials, vol 1 Materials (Boca Raton, FL: CRC Press) pp 257-320
45. Grundmann M and Zúñiga-Pérez J 2016 Pseudomorphic ZnO-based heterostructures: from polar through all semipolar to nonpolar orientations Phys. Status Solidi b 253 351-60
46. Bundesmann C, Schubert M, Spemann D, Rahm A, Hochmuth H, Lorenz M and Grundmann M 2004 Infrared dielectric function and phonon modes of Mg-rich cubic MgxZn1-xO (x > 0.67) thin films on sapphire (0 0 0 1) Appl. Phys. Lett. 85 905-7
47. Lany S, Osorio-Guillén J and Zunger A 2007 Origins of the doping asymmetry in oxides: Hole doping in NiO versus electron doping in ZnO Phys. Rev. B 75 241203
48. Bädeker K 1907 Über die elektrische Leitfähigkeit und die thermoelektrische Kraft einiger Schwermetallverbindungen Ann. Phys. 327 749-66
49. Koffyberg F P 1976 Thermoreflectance spectra of CdO: band gaps and band-population effects Phys. Rev. B 13 4470-6
50. Ueda N, Maeda H, Hosono H and Kawazoe H 1998 Band-gap widening of CdO thin films J. Appl. Phys. 84 6174-7
51. Mudd J J, Lee T-L, Muñoz-Sanjosé V, Zúñiga-Pérez J, Payne D J, Egdell R G and McConville C F 2014 Valence-band orbital character of CdO: a synchrotron-radiation photoelectron spectroscopy and density functional theory study Phys. Rev. B 89 165305
52. Mason T O, Gonzalez G B, Kammler D R, Mansourian-Hadavi N and Ingram B J 2002 Defect chemistry and physical properties of transparent conducting oxides in the CdO-In2O3-SnO2 system Thin Solid Films 411 106-14
53. Yan M, Lane M, Kannewurf C R and Chang R P H 2001 Highly conductive epitaxial CdO thin films prepared by pulsed laser deposition Appl. Phys. Lett. 78 2342-4
54. Yang Y, Jin S, Medvedeva J E, Ireland J R, Metz A W, Ni J, Hersam M C, Freeman A J and Marks T J 2005 CdO as the archetypical transparent conducting oxide. Systematics of dopant ionic radius and electronic structure effects on charge transport and band structure J. Am. Chem. Soc. 127 8796-804
55. Francis C A, Detert D M, Chen G, Dubon O D, Yu K M and Walukiewicz W 2015 NixCd1-xO: semiconducting alloys with extreme type-III band offsets Appl. Phys. Lett. 106 022110
56. Butler K T 2015 Morphological control of band offsets for transparent bipolar heterojunctions: the Bädeker diode Phys. Status Solidi a 212 1461-5
57. Das S and Jayaraman V 2014 SnO2: a comprehensive review on structures and gas sensors Prog. Mater. Sci. 66 112-255 (corrigendum)
58. Yates H M, Evans P, Sheel D W, Nicolay S, Ding L and Ballif C 2013 High-performance tandem silicon solar cells on F:SnO2 Surf. Coat. Technol. 230 228
59. Karazhanov S Zh, Ravindran P, Vajeeston P, Ulyashin A, Finstad T G and Fjellvåg H 2007 Phase stability, electronic structure, and optical properties of indium oxide polytypes Phys. Rev. B 76 075129
60. Janowitz C et al 2011 Experimental electronic structure of In2O3 and Ga2O3 New J. Phys. 13 085014
61. Lin J-J and Li Z-Q 2014 Electronic conduction properties of indium tin oxide: single-particle and many-body transport J. Phys.: Condens. Matter 26 343201
62. Yoshioka S, Hayashi H, Kuwabara A, Oba F, Matsunaga K and Tanaka I 2007 Structures and energetics of Ga2O3 polymorphs J. Phys.: Condens. Matter 19 346211
63. Geller S 1960 Crystal Structure of β-Ga2O3 J. Chem. Phys. 33 676
64. Furthmüller J and Bechstedt F 2016 Quasiparticle bands and spectra of Ga2O3 polymorphs Phys. Rev. B 93 115204
65. Higashiwaki M, Sasaki K, Kuramata A, Masui T and Yamakoshi S 2012 Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (0 1 0) substrates Appl. Phys. Lett. 100 013504
66. Víllora E G, Shimamura K, Yoshikawa Y, Ujiie T and Aoki K 2008 Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping Appl. Phys. Lett. 92 202120
67. Zhang J, Xia C, Deng Q, Xu W S, Shi H S, Wu F and Xu J 2006 Growth and characterization of new transparent conductive oxides single crystals β-Ga2O3:Sn J. Phys. Chem. Solids 67 1656
68. Víllora E G, Shimamura K, Yoshikawa Y, Aoki K and Ichinose N 2004 Large-size β-Ga2O3 single crystals and wafers J. Cryst. Growth 270 420-6
69. Aida H, Nishiguchi K, Takeda H, Aota N, Sunakawa K and Yaguchi Y 2008 Growth of β-Ga2O3 single crystals by the edge-defined, film fed growth method Japan. J. Appl. Phys. 47 8506-9
70. Tamura 2016 Single-crystal gallium oxide (Ga2O3) substrates Report (http://www.tamura-ss.co.jp/en/gao/pdf/151027.pdf)
71. von Wenckstern H, Splith D, Werner A, Müller S, Lorenz M and Grundmann M 2015 Properties of Schottky barrier diodes on (InxGa1-x)2O3 for 0.01≤x≤0.85 determined by using a combinatorial approach ACS Comb. Sci. 17 710-5
72. von Wenckstern H, Splith D, Purfürst M, Zhang Z, Kranert C, Müller S, Lorenz M and Grundmann M 2015 Structural and optical properties of (In,Ga)2O3 thin films and characteristics of Schottky contacts thereon Semic. Sci. Technol. 30 024005
73. Rooksby H P 1943 Structure of nickel oxide Nature 152 304
74. Massarotti V, Capsoni D, Berbenni V, Riccardi R, Marini A and Antolini E 1991 Structural characterization of nickel oxide Z. Naturforsch. 46 503-12
75. Hüfner S 1994 Electronic structure of NiO and related 3d-transition-metal compounds Adv. Phys. 43 183-356
76. Guziewicz M et al 2011 Electrical and optical properties of NiO films deposited by magnetron sputtering Opt. Appl. 41 431-40
77. Sasi B, Gopchandran K G, Manoj P K, Koshy P, Rao P P and Vaidyan V K 2003 Preparation of transparent and semiconducting NiO films Vacuum 68 149-54
78. Newman R and Chrenko R M 1959 Optical properties of nickel oxide Phys. Rev. 114 1507-12
79. Subramanian B, Ibrahim M M, Senthilkumar V, Murali H R, Vidhya V S, Sanjeeviraja C and Jayachandran M 2008 Optoelectronic and electrochemical properties of nickel oxide (NiO) films deposited by DC reactive magnetron sputtering Physica B 403 4104-10
80. Sato H, Minami T, Takata S and Yamada T 1993 Transparent conducting p-type NiO thin films prepared by magnetron sputtering Thin Solid Films 236 27-31
81. Ghosh A, Nelson C M, Abdallah L S and Zollner S 2015 Optical constants and band structure of trigonal NiO J. Vac. Sci. Technol. A 33 061203
82. Ferreira L G, Teles L K and Marques M 2009 Band structure of NiO revisited in preparation (arXiv:0910.4485)
83. Sialvi M Z, Mortimer R J, Wilcox G D, Teridi A M, Varley T S, Wijayantha K G U and Kirk C A 2013 Electrochromic and colorimetric properties of nickel(II)-oxide thin films prepared by aerosol-assisted chemical vapor deposition ACS Appl. Mater. Interfaces 5 5675-82
84. Sonavane A C, Inamdar A I, Shine P S, Deshmukh H P, Patil R S and Patil P S 2010 Efficient electrochromic nickel oxide thin films by electrodeposition J. Alloys Compd. 489 667-73
85. Verwey M, Haaijman M, Romeijn H and van Oosterhout M 1950 Controlled-vacancy semiconductors Philips Res. Rep. 5 173
86. Lu Y M, Hwang W S and Yang J S 2002 Effects of substrate temperature on the resistivity of non-stoichiometric sputtered NiOx films Surf. Coat. Technol. 155 231-5
87. Mitoff S P 1961 Electrical conductivity and thermodynamic equilibrium in nickel oxide J. Chem. Phys. 35 882-9
88. Adler D and Feinleib J 1970 Electrical and optical properties of narrow-band materials Phys. Rev. B 2 3112-34
89. Wu H and Wang L-S 1997 A study of nickel monoxide (NiO), nickel dioxide (ONiO) and Ni(O2) complex by anion photoelectron spectroscopy J. Chem. Phys. 107 16-21
90. Joshi U S, Matsumoto Y, Itaka K, Sumiya M and Koinuma H 2006 Combinatorial synthesis of Li-doped NiO thin films and their transparent conducting properties Appl. Surf. Sci. 252 2524-8
91. Reddy Y A K, Reddy A S and Reddy P S 2013 Influence of oxygen partial pressure on the structural, optical and electrical properties of Cu-doped NiO thin films Phys. Scr. 87 015801
92. Chen S C, Kuo T Y, Lin Y C and Lin H C 2011 Preparation and properties of p-type transparent conductive Cu-doped NiO films Thin Solid Films 519 4944-7
93. Li J-C, Hou X-Y and Cao Q 2014 Effect of Cu doping on the resistive switching of NiO thin films J. Appl. Phys. 115 164507
94. Kawazoe H, Yasukawa M, Hyodo H, Kurita M, Yanagi H and Hosono H 1997 P-type electrical conduction in transparent thin films of CuAlO2 Nature 389 939-42
95. Anderson A Y, Bouhadana Y, Barad H-N, Kupfer B, Rosh-Hodesh E, Aviv H, Tischler Y R, Rühle S and Zaban A 2014 Quantum efficiency and bandgap analysis for combinatorial photovoltaics: sorting activity of Cu2O compounds in all-oxide device libraries ACS Comb. Sci. 16 53-65
96. Ghijsen J, Tjeng L H, van Elp J, Eskes H, Westerink J, Sawatzky G A and Czyzyk M T 1988 Electronic structure of Cu2O and CuO Phys. Rev. b 38 11322-30
97. Meyer B K et al 2012 Binary copper oxide semiconductors: from materials towards devices Phys. Status Solidi b 249 1487-509
98. Ching W Y and Xu Y-N 1989 Ground state and optical properties of Cu2O and CuO crystals Phys. Rev. B 40 7684-95
99. Ito T, Yamaguchi H, Okabe K and Masumi T 1998 Single-crystal growth and characterization of Cu2O and CuO J. Mater. Sci. 33 3555-66
100. Paul G K, Nawa Y, Sato H, Dakurai T and Akimoto K 2006 Defects in Cu2O studied by deep level transient spectroscopy Appl. Phys. Lett. 88 141901
101. Nie X, Wei S-H and Zhang S B 2002 First-principle study of transparent p-type conductive SrCu2O2 and related compounds Phys. Rev. B 65 075111
102. Hodby J W, Jenkins T E, Schwab C, Tamura H and Trivich D 1976 Cyclotron resonance of electrons and of holes in cuprous oxide, Cu2O J. Phys. C: Solid State Phys. 9 1429-39
103. Ishizuka S, Kato S, Okamoto Y and Akimoto K 2002 Hydrogen treatment for polycrystalline nitrogen-doped Cu2O thin film J. Cryst. Growth 237-9 616-20
104. Ishizuka S, Kato S, Maruyama T and Akimoto K 2001 Nitrogen doping into Cu2O thin films deposited by reactive radio-frequency magnetron sputtering Jpn. J. Appl. Phys. 40 2765-8
105. Akimoto K, Ishizuka S, Yanagita M, Nawa Y, Paul G K and Sakurai T 2006 Thin film deposition of Cu2O and application for solar cells Solar Energy 80 715-22
106. Scanlon D O and Watson G W 2011 Uncovering the complex behavior of hydrogen in Cu2O Phys. Rev. Lett. 106 186403
107. Rakhshani A E 1986 Preparation, characteristics and photovoltaic properties of cuprous oxide - a review Solid-State Electron. 29 7-17
108. Tunell G, Posnjak E and Ksanda C J 1935 Geometrical and optical properties, and crystal structure of tenorite Z. Kristallogr. 90 120-42
109. Koffyberg F P and Benko F A 1981 A photoelectrochemical determination of the position of the conduction and valence band edges of p-type CuO J. Appl. Phys. 53 1173-7
110. Parretta A, Jayaraj M K, Di Nocera A, Loreti S, Quercia L and Agati A 1996 Electrical and optical properties of copper oxide films prepared by reactive RF magnetron sputtering Phys. Status Solidi a 155 399-404
111. Nair M T S, Guerrero L, Arenas O L and Nair P K 1999 Chemically deposited copper oxide thin films: structural, optical and electrical properties Appl. Surf. Sci. 150 143-51
112. Oral A Y, Mensur E, Aslan M H and Basaran E 2004 The preparation of copper(II) oxide thin films and the study of their microstructures and optical properties Mater. Chem. Phys. 83 140-4
113. Ray S C 2001 Preparation of copper oxide thin film by the sol-gel-like dip technique and study of their structural and optical properties Sol. Energy Mater. Sol. Cells 68 307-12
114. Tate J, Jayaraj M K, Draeseke M D, Ulbrich T, Sleight A W, Vanaja K A, Nagarajan R, Wager J F and Hoffman R L 2002 p-Type oxides for use in transparent diodes Thin Solid Films 411 119-24
115. Scanlon D O, Walsh A and Watson H W 2009 Understanding the p-type conduction properties of the transparent conducting oxide CuBO2: a density functional theory analysis Chem. Mater. 21 4568-76
116. Yanagi H, Hase T, Ibuki S, Ueda K and Hosono H 2001 Bipolarity in electrical conduction of transparent oxide semiconductor CuInO2 with delafossite structure Appl. Phys. Lett. 78 1583-5
117. Sasaki M and Shimode M 2003 Fabrication of bipolar CuInO2 with delafossite structure J. Phys. Chem. Solids 64 1675-9
118. Liu L, Bai K, Gong H and Wu P 2005 First-principles study of bipolar dopability in the CuInO2 transparent semiconductor Chem. Mater. 17 5529-37
119. Paudel T R, Zakutayev A, Lany S, d'Avezac M and Zunger A 2011 Doping rules and doping prototypes in A2BO4 spinel oxides Adv. Funct. Mater. 21 4493-501
120. Perkins J D et al 2011 Inverse design approach to hole doping in ternary oxides: enhancing p-type conductivity in cobalt oxide spinels Phys. Rev. B 84 205207
121. Varley J B, Schleife A, Janotti A and Van de Walle C G 2013 Ambipolar doping in SnO Appl. Phys. Lett. 103 082118
122. Caraveo-Frescas J A, Nayak P K, Al-Jawhari H A, Granato D B, Schwingenschlögl U and Alshareef H N 2013 Record mobility in transparent p-type Tin monoxide films and devices by phase engineering ACS Nano 7 5160-7
123. Hosono H, Ogo Y, Yanagia H and Kamiya T 2011 Bipolar conduction in SnO thin films Electrochem. Solid-State Lett. 14 H13-6
124. Hautier G, Miglio A, Ceder G, Rignanese G-M and Gonze X 2013 Identification and design principles of low hole effective mass p-type transparent conducting oxides Nat. Commun. 4 2292
125. Hubert H, Garvie L A J, Devouard B, Buseck P R, Petuskey W T and McMillan P F 1998 High-pressure, high-temperature synthesis and characterization of boron suboxide (B6O) Chem. Mater. 10 1530-7
126. Braun R M and Hoppe R 1978 The first oxostannate(II): K2Sn2O3 Angew. Chem., Int. Ed. 17 449-50
127. Martens K-P and Hoppe R 1977 Zum System K2O/PbO. Zur Kenntnis von K2Pb2O3 Z. Anorg. Allg. Chem. 437 116-22
128. Hauser O 1907 Notiz über die Darstellung der Oxysulfide des Zirkoniums und Thoriums Z. Anorg. Chem. 53 74-7
129. McCullough J D, Brewer L and Bromley L A 1948 The crystal structure of zirconium oxysulfide, ZrOS Acta Cryst. 1 287-9
130. Eastman E D, Brewer L, Bromley L E, Gilles P W and Lofgren N L 1951 Preparation and properties of the oxide-sulfides of cerium, zirconium, thorium and uranium J. Am. Chem. Soc. 73 3896-8
131. Zakutayev A, Zhang X, Nagaraja A, Yu L, Lany S, Mason T O, Ginley D S and Zunger A 2013 Theoretical prediction and experimental realization of new stable inorganic materials using the inverse design approach J. Am. Chem. Soc. 135 10048-54
132. Grundmann M, Schein F-L, Lorenz M, Böntgen T, Lenzner J and von Wenckstern H 2013 Cuprous iodide - a p-type transparent semiconductor: history and novel applications Phys. Status Solidi a 210 1671-703
133. Grundmann M 2015 Karl Bädeker (1877-1914) and the discovery of transparent conductive materials Phys. Status Solidi a 212 1407
134. Chen D, Wang Y, Lin Z, Huang J, Chen X Z, Pan D and Huang F 2010 Growth strategy and physical properties of the high mobility p-type CuI crystal Cryst. Growth Des. 10 2057
135. Sun J C, Liang H W, Zhao J Z, Bian J M, Feng Q J, Hu L Z, Zhang H Q, Liang X P, Luo Y M and Du G T 2008 Ultraviolet electroluminescence from n-ZnO:Ga/p-ZnO:N homojunction device on sapphire substrate with p-type ZnO:N layer formed by annealing in N2O plasma ambient Chem. Phys. Lett. 460 548-51
136. Ryu Y R, Kim W J and White H W 2000 Fabrication of homostructural ZnO p-n junctions J. Cryst. Growth 219 419-22
137. Aoki T, Hatanaka Y and Look D C 2000 ZnO diode fabricated by excimer-laser doping Appl. Phys. Lett. 76 3257-8
138. Yanagi H, Ueda K, Ohta H, Orita M, Hirano M and Hosono H 2001 Fabrication of all oxide transparent p-n homojunction using bipolar CuInO2 semiconducting oxide with delafossite structure Solid State Commun. 121 15-7
139. Tüzemen S, Xiong G, Wilkinson J, Mischuck B, Ucer K B and Williams R T 2001 Production and properties of p-n junctions in reactively sputtered ZnO Phys. B: Condens. Matter 308-10 1197-200
140. Hwang D-K, Bang K-H, Jeong M-C and Myoung J-M 2003 Effects of RF power variation on properties of ZnO thin films and electrical properties of p-n homojunction J. Cryst. Growth 254 449-55
141. Tsukazaki A et al 2005 Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO Nat. Mater. 4 42-6
142. Ryu Y, Lee T-S, Lubguban J A, White H W, Kim B-J, Park Y S and Youn C-J 2006 Next generation of oxide photonic devices: ZnO-based ultraviolet light emitting diodes Appl. Phys. Lett. 88 241108
143. von Wenckstern H, Pickenhain R, Schmidt H, Brandt M, Biehne G, Lorenz M, Grundmann M and Brauer G 2006 Deep acceptor states in ZnO single crystals Appl. Phys. Lett. 89 092122
144. Liu W F, Bian J M, Hu L Z, Liang H W, Zang H Q, Sun J C, Zhao Z W, Liu A M and Du G T 2007 Electroluminescence from a ZnO homojunction device grown by pulsed laser deposition Solid State Commun. 142 655-8
145. Ji Z-G, Zhou R-F, Mao Q-N, Huo L-J and Cao H 2009 A Transparent PN Junction Based on Tin-antimony Oxide Films J. Inorg. Mater. 24 1259-62
146. Han K and Tao M 2009 Electrochemically deposited p-n homojunction cuprous oxide solar cells Sol. Energy Mater. Sol. Cells 93 153-7
147. Yang Z, Chu S, Chen W V, Li L, Kong J, Ren J, Yu P K L and Liu J 2010 ZnO:Sb/ZnO:Ga light emitting diode on c-plane sapphire by molecular beam epitaxy Appl. Phys. Express 3 032101
148. Le Boulbar E, Millon E, Mathias J, Boulmer-Leborgne C, Nistor M, Gherendi F, Sbaïc N and Quoirin J B 2011 Pure and Nb-doped TiO1.5 films grown by pulsed-laser deposition for transparent p-n homojunctions Appl. Surf. Sci. 257 5380-3
149. Liu Y S, Hsieh C I, Wu Y J, Wei Y S, Lee P M and Liu C Y 2012 Transparent p-type AlN:SnO2 and p-AlN:SnO2/n-SnO2:In2O3 p-n junction fabrication Appl. Phys. Lett. 101 122107
150. Bu I Y Y 2013 Room temperature deposition of graded ZnO homojunction from a single sputter target Superlatt. Microstr. 64 213-9
151. Stankiewicz J, Villuendas F, Lozano M P and Díez I 2013 Indium oxide thin-film homo-junctions: Morphology and electrical properties J. Appl. Phys. 114 083703
152. Um J and Kim S E 2014 Homo-junction p-n diode using p-type SnO and n-type SnO2 thin films ECS Solid State Lett. 3 P94-8
153. Sathyamoorthy R, Abhirami K M, Gokul B, Gautam S, Chae K H and Asokan K 2014 Fabrication of p-n junction diode using SnO/SnO2 thin films and its device characteristics Electron. Mater. Lett. 10 743-7
154. Snigurenko D, Kopalko K, Krajewski T A, Jakiela R and Guziewicz E 2014 Nitrogen doped p-type ZnO films and p-n homojunction Semicond. Sci. Technol. 30 015001
155. Yang T, Zhao J, Li X, Gao X, Xue C, Wu Y and Tai R 2015 Preparation and characterization of p-type transparent conducting SnO thin films Mater. Lett. 139 39-41
156. Chiu H-J, Chen T-H, Lai L-W, Lee C-T, Hong J-D and Liu D S 2015 The achievement of a zinc oxide-based homojunction diode using radio frequency magnetron cosputtering system J. Nanomater. 2015 284835
157. Yu L, Xiong L and Yu Y 2015 Cu2O Homojunction solar cells: F-doped N-type thin film and highly improved efficiency J. Phys. Chem. C 119 22803-11
158. Ohta H, Kawamura K, Orita M, Sarukura N, Hirano M and Hosono H 2000 UV-emitting diode composed of transparent oxide semiconductors: p-SrCu2O2/n-ZnO, Electron. Lett. 36 984
159. Alivov Y I, Kalinina E V, Cherenkov A E, Look D C, Ataev B M, Omaev A K, Chukichev M V and Bagnall D M 2003 Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates Appl. Phys. Lett. 83 4719-21
160. Xi Y Y, Hsu Y F, Djuriić A B, Ng A M C, Chan W K, Tam H L and Cheah K W 2008 NiO/ZnO light emitting diodes by solution-based growth Appl. Phys. Lett. 92 113505
161. Yousif A A 2014 Current transport studies of n-ZnO/p-Si hetero-nanostructures grown by pulsed laser deposition Int. J. Appl. Innov. Eng. Manag. 3 35-43
162. Uekawa N, Suzuki T, Ozeki S and Kaneko K 1992 Rectification effect by a p-n junction oxide film Langmuir 8 1-3
163. Kudo A, Yanagi H, Ueda K, Hosono H, Kawazoe H and Yano Y 1999 Fabrication of transparent p-n heterojunction thin film diodes based entirely on oxide semiconductors Appl. Phys. Lett. 75 2851-3
164. Ohta H, Orita M, Hirano M and Hosono H 2001 Fabrication and characterization of ultraviolet-emitting diodes composed of transparent p-n heterojunction, p-SrCu2O2 and n-ZnO J. Appl. Phys. 89 5720
165. Hoffman R L, Wager J F, Jayaraj M K and Tate J 2001 Electrical characterization of transparent p-i-n heterojunction diodes J. Appl. Phys. 90 5763-7
166. Jayaraj M K, Draeseke A D, Tate J and Sleight A W 2001 p-Type transparent thin films of CuY1-xCaxO2 Thin Solid Films 397 244-8
167. Zhang J, Tanaka H and Kawai T 2002 Rectifying characteristic in all-perovskite oxide film p-n junction with room temperature ferromagnetism Appl. Phys. Lett. 80 4378-80
168. Ohta H, Hirano M, Nakahara K, Maruta H, Tanabe T, Kamiya M, Kamiya T and Hosono H 2003 Fabrication and photoresponse of a pn-heterojunction diode composed of transparent oxide semiconductors, p-NiO and n-ZnO Appl. Phys. Lett. 83 1029-31
169. Narushima S, Mizoguchi H, Shimizu K-I, Ueda K, Ohta H, Hirano M, Kamiya T and Hosono H 2003 A p-Type Amorphous Oxide Semiconductor and Room Temperature Fabrication of Amorphous Oxide p-n Heterojunction Diodes Adv. Mater. 15 1409-13
170. Ohta H, Mizoguchi H, Hirano M, Narushima S, Kamiya T and Hosono H 2003 Fabrication and characterization of heteroepitaxial p-n junction diode composed of wide-gap oxide semiconductors p-ZnRh2O4/n-ZnO Appl. Phys. Lett. 82 823-5
171. Tonooka K, Bando H and Aiura Y 2003 Photovoltaic effect observed in transparent p-n heterojunctions based on oxide semiconductors Thin Solid Films 445 327-31
172. Ataev B M, Alivov Y I, Nikitenko V A, Chukichev M V, Mamedov V V and Makhmudov S S 2003 n-ZnO/p-GaN/α-Al2O3 heterojunction as a promising blue light emitting system J. Optoelectron. Adv. Mater. 5 899-902
173. Hiramatsu H, Ueda K, Ohta H, Kamiya T, Hirano M and Hosono H 2005 Excitonic blue luminescence from p-LaCuOSe/n-InGaZn5O8 light-emitting diode at room temperature Appl. Phys. Lett. 87 211107
174. Alivov Y I, Özgür U, Dogan S, Johnstone D, Avrutin V, Onojima N, Liu C, Xie J, Fan Q and Morkoç H 2005 Photoresponse of n-ZnO/p-SiC heterojunction diodes grown by plasma-assisted molecular-beam epitaxy Appl. Phys. Lett. 86 241108
175. Kim D-S, Park T-J, Kim D-H and Choi S-Y 2006 Fabrication of a transparent p-n heterojunction thin film diode composed of p-CuAlO2/n-ZnO Phys. Status Solidi a 203 R51-3
176. Ajimsha R S, Vanaja K A, Jayaraj M K, Misra P, Dixit V K and Kukreja L M 2007 Transparent p-AgCoO2/n-ZnO diode heterojunction fabricated by pulsed laser deposition Thin Solid Films 515 7352-6
177. Dekkers J M 2007 Transparent conducting oxides on polymeric substrates by pulsed laser deposition PhD Thesis University of Twente
178. Banerjee A N, Nandy S, Ghosh C K and Chattopadhyay K K 2007 Fabrication and characterization of all-oxide heterojunction p-CuAlO2+x/n-Zn1-xAlxO transparent diode for potential application in 'invisible electronics' Thin Solid Films 515 7324-30
179. Banerjee A N and Chattopadhyay K K 2008 Electro-optical properties of all-oxide p-CuAlO2/n-ZnO:Al transparent heterojunction thin film diode fabricated on glass substrate Cent. Eur. J. Phys. 6 57-63
180. Jee S H, Park H, Kim S H, Lee J W, Yoon Y S, Kang C W and Kim D-J 2008 Properties of hetero-structured diode with n-type ZnO and p-type NiO J. Korea Phys. Soc. 53 446-50
181. Vanaja K A, Bhatta U M, Ajimsha R S, Jayalekshmi S and Jayaraj M K 2008 p-AgCoO2/n-ZnO heterojunction diode grown by RF magnetron sputtering Bull. Mater. Sci. 31 753-8
182. Chen X, Ruan K, Wu G and Bao D 2008 Tuning electrical properties of transparent p-NiO/n-MgZnO heterojunctions with band gap engineering of MgZnO Appl. Phys. Lett. 93 112112
183. Ai L, Fang G, Yuan L, Liu N, Wang M, Li C, Zhang Q, Li J and Zhao X 2008 Influence of substrate temperature on electrical and optical properties of p-type semitransparent conductive nickel oxide thin films deposited by radio frequency sputtering Appl. Surf. Sci. 254 2401-5
184. Gupta R K, Ghosh K and Kahol P K 2009 Fabrication and characterization of NiO/ZnO p-n junctions by pulsed laser deposition Physica E 41 617-20
185. Lotus A F, Bhargava S, Bender E T, Evans E A, Ramsier R D, Reneker D H and Chase G G 2009 Electrospinning route for the fabrication of p-n junction using nanofiber yarns J. Appl. Phys. 106 014303
186. Pinto N J, Carrasquillo K V, Rodd C M and Agarwal R 2009 Rectifying junctions of tin oxide and poly(3-hexylthiophene) nanofibers fabricated via electrospinning Appl. Phys. Lett. 94 083504
187. Kim S, Cianfrone J A, Sadik P, Kim K-W, Ivill M and Norton D P 2010 Room temperature deposited oxide p-n junction using p-type zinc-cobalt-oxide J. Appl. Phys. 107 103538
188. Dutta T, Gupta P, Gupta A and Narayan J 2010 Effect of Li doping in NiO thin films on its transparent and conducting properties and its application in heteroepitaxial p-n junctions J. Appl. Phys. 108 083715
189. Yang M, Shi Z, Feng J, Pu H, Li G, Zhou J and Zhang Q 2011 Copper doped nickel oxide transparent p-type conductive thin films deposited by pulsed plasma deposition Thin Solid Films 519 3021-5
190. Tsai S-Y, Hon M-H and Lu Y-M 2011 Fabrication of transparent p-NiO/n-ZnO heterojunction devices for ultraviolet photodetectors Solid State Electron. 63 37-41
191. Singh B and Ghosh S 2011 Zinc oxide and iron phthalocyanine(FePc) based hybrid inorganic-organic p-n junction diode using heavily doped zinc oxide transparent conducting electrode AIP Conf. Proc. 1349 1105
192. Mistry B V, Bhatt P, Bhavsar K H, Trivedi S J, Trivedi U N and Joshi U S 2011 Growth and properties of transparent p-NiO/n-ITO (In2O3:Sn) p-n junction thin film diode Thin Solid Films 519 3840-3
193. Kim S, Seok H, Lee H, Lee M, Choi D and Chai K 2012 Fabrication of transparent p-n junction diode based on oxide semiconductors deposited by RF magnetron sputtering Ceram. Int. 38 S623-6
194. Cavas M, Gupta R K, Al-Ghamdi A A, Al-Hartomy O A, El-Tantawy F and Yakuphanoglu F 2012 Fabrication and electrical characterization of transparent NiO/ZnO p-n junction by the sol-gel spin coating method J. Sol-Gel Sci. Technol. 64 219-23
195. Azaceta E, Chavhan S, Rossi P, Paderi M, Fantini S, Ungureanu M, Miguel O, Grande H-J and Tena-Zaera R 2012 NiO cathodic electrochemical deposition from an aprotic ionic liquid: Building metal oxide n-p heterojunctions Electroch. Acta 71 39-43
196. Bae H, Lee K H, Lee K H, Song J H and Im S 2012 Transparent p-NiO/n-ZnO diodes used in circuit rectifiers Phys. Status Solidi RRL 6 475-7
197. Ding K, Hu Q C, Chen D G, Zheng Q H, Xue X G and Huang F 2012 Fabrication and energy band alignment of n-ZnP/p-CuI heterojunction IEEE Electron Dev. Lett. 33 1750-2
198. Münzenrieder N, Zysset C, Petti L, Kinkeldei T, Salvatore G A and Tröster G 2013 Room temperature fabricated flexible NiO/IGZO pn diode under mechanical strain Solid State Electron. 87 17-20
199. Diamond A M, Corbellini L, Balasubramaniam K R, Chen S, Wang S, Matthews T S, Wang L-W, Ramesh R and Ager J W 2012 Copper-alloyed ZnS as a p-type transparent conducting material Phys. Status Solidi a 209 2101-7
200. Sanal K C and Jayaraj M K 2013 Growth and characterization of tin oxide thin films and fabrication of transparent p-SnO/n-ZnO p-n hetero junction Mater. Sci. Eng. B 178 816-21
201. Chen L-F, Wang Y-P, Chiu T-W, Shih W-C and Wu M-S 2013 Fabrication of transparent CuCrO2:Mg/ZnO p-n junctions prepared by magnetron sputtering on an indium tin oxide glass substrate Japan. J. Appl. Phys. 52 05EC02
202. Saji K J, Populoh S, Tiwari A N and Romanyuk Y E 2013 Design of p-CuO/n-ZnO heterojunctions by RF magnetron sputtering Phys. Status Solidi a 210 1386-91
203. Chi C-T, Lu I-F, Chiu I-C, Chen P-Y, Huang B-W, Cheng I-C and Chen J-Z 2013 Flexible transparent ZnO:Al/ZnO/CuAlOx:Ca heterojunction diodes on polyethylene terephthalate substrates J. Electron. Mater. 42 1242-5
204. Wu C-C and Yang C-F 2013 Fabricate heterojunction diode by using the modified spray pyrolysis method to deposit nickel-lithium oxide on indium tin oxide substrate ACS Appl. Mater. Interfaces 5 4996-5001
205. Park N, Sun K, Jing Y and Wang D 2013 High efficiency NiO/ZnO heterojunction UV photodiode by sol-gel processing J. Mater. Chem. C 44 7333-8
206. Cao L, Li X, Wang D and Zhu L 2013 Li-doped NiMgO thin films as a promising p-type transparent conductive material with wide band-gap Mater. Lett. 110 73-5
207. Schein F-L, von Wenckstern H and Grundmann M 2013 Transparent p-CuI/n-ZnO heterojunction diodes Appl. Phys. Lett. 102 092109
208. Minami T, Nishi Y and Miyata T 2013 High-efficiency Cu2O-based heterojunction solar cells fabricated using a Ga2O3 thin film as N-type layer Appl. Phys. Express 6 044101
209. El-Atab N, Alqatari S, Oruc F B, Souier T, Chiesa M, Okyay A K and Nayfeh A 2013 Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon AIP Adv. 3 102119
210. Abbasi M A, Ibupoto Z H, Hussain M, Nur O and Willander M 2013 The fabrication of white light-emitting diodes using the n-ZnO/NiO/p-GaN heterojunction with enhanced luminescence Nanoscale Res. Lett. 8 320
211. Zhou T, Lu B, Ye Y, Pan Y, Lu J and Ye Z 2014 Improvement of electric properties in transparent p-Li0.07Ni0.93O(1 1 1)/n-ZnO(112'0) heterojunction with Mg1-xZnxO intermediate layer Mater. Lett. 114 76-9
212. Cheng I-C, Chang S-H, Lin G-W, Chi C-T, Hsiao S-H and Chen J-Z 2014 Effect of Al/Cu ratios on the optical, electrical, and electrochemical properties of Cu-Al-Ca-O thin films J. Alloy Compd. 609 111-5
213. Chen W-C, Hsu P-C, Chien C-W, Chang K-M, Hsu C-J, Chang C-H, Lee W-K, Chou W-F, Hsieh H-H and Wu C-C 2014 Room-temperature-processed flexible n-InGaZnO/p-Cu2O heterojunction diodes and high-frequency diode rectifiers J. Phys. D: Appl. Phys. 47 365101
214. Schein F-L, Winter M, Böntgen T, von Wenckstern H and Grundmann M 2014 Highly rectifying p-ZnCo2O4/n-ZnO heterojunction diodes Appl. Phys. Lett. 104 022104
215. Grundmann M, Karsthof R and von Wenckstern H 2014 The recombination current in type-II heterostructure bipolar diodes ACS Appl. Mater. Interfaces 6 14785-9
216. Iutzi R M and Fitzgerald E A 2014 Microstructure and conductance-slope of InAs/GaSb tunnel diodes J. Appl. Phys. 115 234503
217. Schlupp P, Schein F-L, von Wenckstern H and Grundmann M 2015 All amorphous oxide bipolar heterojunction diodes from abundant metals Adv. Electron. Mater. 1 1400023
218. von Wenckstern H, Zhang Z, Schmidt F, Lenzner J, Hochmuth H and Grundmann M 2013 CrystEngComm 15 10020-7
219. Bitter S, Schlupp P, Bonholzer M, von Wenckstern H and Grundmann M 2016 Influence of the cation ratio on optical and electrical properties of zinc-tin-oxide thin films from pulsed-laser deposition ACS Comb. Sci. 18 188-94
220. Tsay C-Y and Liang S-C 2015 Fabrication of p-type conductivity in SnO2 thin films through Ga doping J. Alloys Compd. 622 644-50
221. von Wenckstern H, Splith D, Lanzinger S, Schmidt F, Müller S, Schlupp P, Karsthof R and Grundmann M 2015 pn-Heterojunction Diodes with n-Type In2O3 Adv. Electron. Mater. 4 1400026
222. Deng R et al 2009 X-ray photoelectron spectroscopy measurement of n-ZnO/p-NiO hetero-structure valence-band offset Appl. Phys. Lett. 94 022108
223. Shih Y T, Wu M K, Chen M J, Cheng Y C, Yang J R and Shiojiri M 2010 ZnO-based heterojunction light-emitting diodes on p-SiC(4H) grown by atomic layer deposition Appl. Phys. B 98 767-72
224. Grundmann M 2011 Formation of epitaxial domains: unified theory and survey of experimental results Phys. Status Solidi b 248 805-24
225. Yang C, Kneiß M, Schein F-L, Lorenz M and Grundmann M 2016 Room-temperature domain-epitaxy of copper iodide thin films for transparent CuI/ZnO heterojunctions with high rectification ratios larger than 109 Sci. Rep. 6 21937
226. Hwang D-K, Kang S-H, Lim J-H, Yang E-J, Oh J-Y, Yang J-H and Park S-J 2005 p-ZnO/n-GaN heterostructure ZnO light emitting diodes Appl. Phys. Lett. 86 222101
227. Wang H, Zhang B-L, Wu G-G, Wu C, Shi Z-F, Zhao Y, Wang J, Ma Y, Du G-T and Dong X 2012 Properties of p-NiO/n-GaN diodes fabricated by magnetron sputtering Chin. Phys. Lett. 29 107304
228. Zhang D, Nozaki S and Uchida K 2014 NiO/Si heterostructures formed by UV oxidation of nickel deposited on Si substrates J. Vac. Sci. Technol. B 32 031202
229. Zhao Y, Wang H, Wu G, Jing Q, Gao F, Li W, Zhang B and Du G 2015 Near infrared electroluminescence from n-InN/p-NiO heterojunction light-emitting diode Mater. Res. Express 2 035901
230. Impasalini M S, Devi R G, Balumurugan D, Jeyaprakash B G and Rayappan J B B 2012 Spray deposited thin film metal oxide based heterojunction for solar cell application J. Appl. Sci. 12 1742-5
231. Monroy E, Omnés F and Calle F 2003 Wide-bandgap semiconductor ultraviolet photodetectors Semicond. Sci. Technol. 18 R33-51
232. Sang L, Liao M and Sumiya M 2013 A comprehensive review of semiconductor ultraviolet photodetectors: from thin film to one-dimensional nanostructures Sensors 13 10482-518
233. Jeong I-S, Kim J H and Im S 2003 Ultraviolet-enhanced photodiode employing n-ZnO/p-Si structure Appl. Phys. Lett. 83 2946-8
234. Kim H Y, Kim J H, Kim Y J, Chae K H, Whang C N, Song J H and Im S 2001 Photoresponse of Si detector based on n-ZnO/p-Si and n-ZnO/n-Si structures Opt. Mater. 17 141-4
235. Chen L-C 2012 Si-based ZnO ultraviolet photodiodes Photodiodes - from Fundamentals to Applications ed I Yun (Rijeka: Intech)
236. Imura S, Kikuchi K, Miyakawa K, Ohtake H and Kubota M 2014 Low-voltage-operation avalanche photodiode based on n-gallium oxide/p-crystalline selenium heterojunction Appl. Phys. Lett. 104 242101
237. Ismail R A 2009 Characteristics of p-Cu2O/n-Si heterojunction photodiode made by rapid thermal oxidation J. Semicond. Technol. Sci. 9 51-4
238. Ohta H, Kamiya M, Kamiya T, Hirano M and Hosono H 2003 UV-detector based on pn-heterojunction diode composed of transparent oxide semiconductors, p-NiO/n-ZnO Thin Solid Films 445 317-21
239. Wang K, Vygranenko Y and Nathan A 2008 Fabrication and characterization of NiO/ZnO/ITO p-i-n heterostructure Thin Solid Films 516 1640-3
240. Wang K, Vygranenko Y and Nathan A 2008 Optically transparent ZnO-based n-i-p ultraviolet photodetectors Thin Solid Films 515 6981-5
241. Nakagomi S, Momo T, Takahashi S and Kokubun Y 2013 Deep ultraviolet photodiodes based on β-Ga2O3/SiC heterojunction Appl. Phys. Lett. 103 072105
242. Nakagomi S, Sato T, Takahashi Y and Kokubun Y 2015 Deep ultraviolet photodiodes based on the β-Ga2O3/GaN heterojunction Sensors Actuators A 232 208-13
243. Lunt R R 2012 Theoretical limits for visibly transparent photovoltaics Appl. Phys. Lett. 101 043902
244. Karsthof R, Räcke P, Zhang Z, von Wenckstern H and Grundmann M 2015 Semi-transparent n-ZnO/p-NiO UV solar cells Phys. Status Solidi a 213 30-7
245. Warasawa M, Watanabe Y, Ishida J, Murata Y, Chichibu S F and Sugiyama M 2013 Fabrication of visible-light-transparent solar cells using p-type NiO films by low oxygen fraction reactive RF sputtering deposition Japan. J. Appl. Phys. 52 021102
246. Rai P E 1988 Cu2O solar cells: a review Sol. Cells 25 265-71
247. Rühle S, Anderson A Y, Barad H-N, Kupfer B, Bouhadana Y, Rosh-Hodesh E and Zaban A 2012 All-oxide photovoltaics J. Phys. Chem. Lett. 3 3755-64
248. Schein F-L, von Wenckstern H, Frenzel H and Grundmann M 2012 ZnO-based n-channel junction field-effect transistor with room-temperature fabricated p-type ZnCo2O4-gate IEEE Electron Dev. Lett. 33 676
249. Karsthof R, von Wenckstern H and Grundmann M 2015 Transparent JFETs based on p-NiO/n-ZnO heterojunctions IEEE Trans. Electron Dev. 62 3999-4003
250. Grundmann M, Frenzel H, Lajn A, von Wenckstern H, Schein F and Lorenz M 2010 ZnO-based MESFET devices Proc. Mater. Res. Soc. 1201 H01-01
251. Klüpfel F J, Schein F L, Lorenz M, Frenzel H, von Wenckstern H and Grundmann M 2013 Comparison of ZnO-based JFET, MESFET, and MISFET IEEE Trans. Electron Dev. 60 1828-33
252. Dhananjay, Chu C-W, Ou C-W, Wu M-C, Ho Z-Y, Ho K-C and Lee S-W 2008 Complementary inverter circuits based on p-SnO2 and n-In2O3 thin film transistors Appl. Phys. Lett. 92 232103
253. Dindar A, Kim J B, Fuentes-Hernandez C and Kippelen B 2011 Metal-oxide complementary inverters with a vertical geometry fabricated on flexible substrates Appl. Phys. Lett. 99 172104
254. Martins R, Nathan A, Barros R, Pereira L, Barquinha P, Correia N, Costa R, Ahnood A, Ferreira I and Fortunato E 2011 Complementary metal oxide semiconductor technology with and on paper Adv. Mater. 23 4491-6
255. Fortunato E, Barquinha P and Martins R 2012 Oxide semiconductor thin-film transistors: a review of recent advances Adv. Mater. 24 2945-86
256. Chiu I-C, Li Y-S, Tu M-S and Cheng I-C 2014 Complementary oxide-semiconductor-based circuits with n-channel ZnO and p-channel SnO thin-film transistors IEEE Electron Dev. Lett. 35 1263
257. Nayak P K, Caraveo-Frescas J A, Wang Z, Hedhili M N, Wang Q X and Alshareef H N 2014 Thin film complementary metal oxide semiconductor (CMOS) device using a single-step deposition of the channel layer Sci. Rep. 4 4692
258. Wang Z, Al-Jawhari H A, Nayak P K, Caraveo-Frescas J A, Wei N, Hedhili M N and Alshareef H N 2015 Low temperature processed complementary metal oxide semiconductor (CMOS) device by oxidation effect from capping layer Sci. Rep. 5 9617
259. Klüpfel F J, Holtz A, Schein F-L, von Wenckstern H and Grundmann M 2015 All-oxide inverters based On ZnO channel JFETs with amorphous ZnCo2O4 gates IEEE Trans. Electron Dev. 62 4004-8
260. Frenzel H, Schein F, Lajn A, von Wenckstern H and Grundmann M 2010 High-gain integrated inverters based on ZnO MESFET technology Appl. Phys. Lett. 96 113502
261. Klüpfel F, von Wenckstern H and Grundmann M 2015 Ring oscillators based on ZnO channel JFETs and MESFETs unpublished