Fabrication and electrical characterization of transparent NiO/ZnO p-n junction by the sol-gel spin coating method

Journal of Sol-Gel Science and Technology

Volumn 64, Issue 1, 2012, Pages 219-223

  Cavas, M ^a   Gupta, R K ^b   Al Ghamdi, A A ^c   Al Hartomy, Omar A ^c,d   El Tantawy, Farid ^e   Yakuphanoglu, F ^a,c  

^a FIRAT UNIVERSITY   (Turkey)

^b NORTH CAROLINA A AND T STATE UNIVERSITY   (United States)

^c KING ABDULAZIZ UNIVERSITY   (Saudi Arabia)

^d UNIVERSITY OF TABUK   (Saudi Arabia)

^e Suez Canal University   (Egypt)

Author keywords

NiO; p n junction; Semiconductor; Sol gel; Thin films; ZnO

Indexed keywords

BARRIER HEIGHTS; ELECTRICAL CHARACTERIZATION; FIBROUS STRUCTURES; IDEALITY FACTORS; JUNCTION PARAMETERS; NIO; NIO FILMS; P-N JUNCTION; RECTIFYING BEHAVIORS; SOL-GEL SPIN COATING METHOD; WAVELENGTH RANGES; ZNO; ZNO FILMS;

ATOMIC FORCE MICROSCOPY; SEMICONDUCTOR MATERIALS; SOL-GEL PROCESS; SOL-GELS; THERMIONIC EMISSION; THIN FILMS; ZINC OXIDE;

SEMICONDUCTOR JUNCTIONS;

EID: 84867871875     PISSN: 09280707     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10971-012-2850-3     Document Type: Article

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