Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon

AIP Advances

Volumn 3, Issue 10, 2013, Pages

  El Atab, Nazek ^a   Alqatari, Samar ^a   Oruc, Feyza B ^b   Souier, Tewfic ^a   Chiesa, Matteo ^a   Okyay, Ali K ^b   Nayfeh, Ammar ^a  

^a KHALIFA UNIVERSITY   (United Arab Emirates)

^b BILKENT UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE AFM; HETEROJUNCTION DIODES; LOW TEMPERATURES; ON/OFF RATIO; P-TYPE SILICON; RECTIFICATION PROPERTIES; REVERSE BIAS; TURN-ON VOLTAGES;

ATOMIC FORCE MICROSCOPY; DIODES; ELECTRIC FIELDS; HETEROJUNCTIONS; SEMICONDUCTOR DIODES; ZINC OXIDE;

ATOMIC LAYER DEPOSITION;

EID: 84891551464     PISSN: None     EISSN: 21583226     Source Type: Journal    
DOI: 10.1063/1.4826583     Document Type: Article

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