Photoresponse of Si detector based on n-ZnO/p-Si and n-ZnO/n-Si structures

Optical Materials

Volumn 17, Issue 1-2, 2001, Pages 141-144

  Kim, H Y ^a   Kim, J H ^a   Kim, Y J ^a   Chae, K H ^a   Whang, C N ^a   Song, J H ^b   Im, S ^a  

^a Yonsei University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

Crystalline quality; Current voltage; n ZnO n; P Si; Photocurrent; Photodiode; Sputtering

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; PHOTOCURRENTS; PHOTODETECTORS; PHOTOSENSITIVITY; POROUS SILICON; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SILICON SENSORS; ZINC OXIDE;

SILICON DETECTORS;

PHOTODIODES;

EID: 0035360402     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-3467(01)00037-4     Document Type: Conference Paper

References (8)