Deep ultraviolet photodiodes based on the β-Ga2O3/GaN heterojunction

Sensors and Actuators, A: Physical

Volumn 232, Issue , 2015, Pages 208-213

  Nakagomi, Shinji ^a   Sato, Taka Aki ^a   Takahashi, Yusuke ^a   Kokubun, Yoshihiro ^a  

^a ISHINOMAKI SENSHU UNIVERSITY   (Japan)

Author keywords

Deep UV; Gallium oxide; GaN; Heterojunction; Photodiode

Indexed keywords

CRYSTAL STRUCTURE; GALLIUM NITRIDE; HETEROJUNCTIONS; III-V SEMICONDUCTORS;

DEEP ULTRAVIOLET; DEEP UV; DEEP-ULTRAVIOLET PHOTODIODES; GALLIUM OXIDES; OXYGEN PLASMAS; RECTIFYING PROPERTIES; RESPONSIVITY; UV SENSITIVITY;

PHOTODIODES;

EID: 84936865897     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2015.06.011     Document Type: Article

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