Characteristics of p-Cu20/n-Si heterojunction photodiode made by rapid thermal oxidation

Journal of Semiconductor Technology and Science

Volumn 9, Issue 1, 2009, Pages 51-54

  Ismail, Raid A ^a  

^a UNIVERSITY OF TECHNOLOGY   (Iraq)

Author keywords

Cuprous oxide; Heterojunction; Rapid thermal oxidation; Thin film

Indexed keywords

HETEROJUNCTIONS; OXIDATION; OXIDE FILMS; PHOTODIODES; RAPID THERMAL PROCESSING; REGENERATORS; SEMICONDUCTING FILMS; SILICON WAFERS; SINGLE CRYSTALS; THERMOOXIDATION; THIN FILMS;

BUILT-IN POTENTIAL; CUPROUS OXIDE; HALL EFFECT MEASUREMENT; HETEROJUNCTION PHOTODIODES; P TYPE CONDUCTIVITY; POST DEPOSITION ANNEALING; RAPID THERMAL OXIDATION; RECTIFYING PROPERTIES;

COPPER;

EID: 65349167331     PISSN: 15981657     EISSN: None     Source Type: Journal    
DOI: 10.5573/JSTS.2009.9.1.051     Document Type: Article

References (20)

1. 20 solar cells : A review," Solar Cells,25, 265,1988.
2. A.E. Rakshani, "Preparation, characteristics and photovoltaic properties of cuprous oxide-A review," Solid State Electron, 29,7,1986.
3. 20 and Cu nanospheres : preparation and applications for sensitive gas sensors," Chem. Mater., 18, 867,2006.
4. 20 octahedral and their morphology-dependent photocatalytic properties,"/. Phys. Chem. B., 110,13829,2006.
5. 20 nanoparitcles supported on silica gel," Nano Lett., 6,2095,2006.
6. R. N. Briskman, "A study of electrodeposited cuprous oxide photovoltaic cells," Sol. Energy Mater. Sol. Cells, 27,361,1992.
7. 20 films electrodeposited on different substrates," Semicond. Sci. Technol., 20,44, 2005.
8. Y. C. Zhou and J. A. Switzer, "Glavanostatic electro-deposition and microstructure of coppert(I) oxide film," Mater. Res. Innovat, 2,22, 1998.
9. T. Maruyama, "Copper oxide thin films prepared from copper dipivaloylmethanete and oxygen by chemical vapor deposition," Jpn. J. Appl. Phys., 37, 4099,1998.
10. V. Figueiredo, E. Elangovan, G. Goncalves, P. Barquinha, L. Pereira, N. Franco, E. Alves, R. Martins, and E. Fortunato, "Effect of post-annealing on the properties of copper oxide thin films obtained from the oxidation of evaporated metallic copper," Applied Surface Science, 254,3949,2008.
11. R. Kita, K. Kawaguchi, T. Hase, T. Koga, R. Itti, and T. Morishita, "Effect of oxygen ion energy on the growth of CuO films by molecular beam epitaxy using mass-separated low energy O+ beams," J. Mater. Res., 9,1280,1994.
12. Xinxin Ma, Gang Wang, Ken Yukimura, and Mingren Sun, " Characteristics of copper oxide films deposited by PBII&D," Surface and Coatings Technology, 201,6712,2007.
13. F. Drobny and D. Pulfrey, "Properties of reactively-sputtered copper oxide thin films," Thin Solid Films, 61,89,1979.
14. thIEEE Photovoltaic Specialists Conference-1978, Washington, DC, USA, 180, 1978.
15. 20 films made by rapid thermal oxidation," China Physics Letter, 2, 2977, 2005.
16. S. Koynov, M. Brandt, and M. Stutmann, "Black non-reflecting silicon surfaces for solar cells," Appl. Phys. Lett, 88,203107,2006.
17. J. Switzer, R. Liu, E. Bohannan, and F. Ernst, "Epitaxial electrodeposition of crystalline oxide on single-crystalline silicon," J. Phys. Chem. B., 106, 12369, 2002.
18. L. Chen and C. Pan, "Photosensitivity enhancement of ZnO/Si photodiodes through use of an ultrathin oxide interlayer," Eur. Phys. J. Appl. Phys., 44, 43, 2008.
19. L. Mandalapu, F. Xiu, Z. Yang, D. Zhao, J. Liua, "P-type behavior from Sb-doped ZnO heteroj unction,"Appl. Phys. Lett, 88,112108, 2006.
20. R. Ismail, "Studies on fabrication and characterization of a high-performance Al-doped ZnO/n-Si (111) heterojunction photodetector," Semicon. Set Technol., 23,075030,2008.