Fabrication of transparent p-n junction diode based on oxide semiconductors deposited by RF magnetron sputtering

Ceramics International

Volumn 38, Issue SUPPL. 1, 2012, Pages

  Kim, Seiki ^a   Seok, Hyewon ^a,b   Lee, Hyunseok ^a   Lee, Mijae ^a   Choi, Duckkyun ^b   Chai, Kyounghoon ^c  

^a Korea Institute of Ceramic Engineering and Technology (KICET)   (South Korea)

^b Hanyang University   (South Korea)

^c LG Innotek Co Ltd   (South Korea)

Author keywords

A. Films; C. Electrical properties; C. Optical properties; SrCu 2O 2

Indexed keywords

AL-DOPED ZNO; ELECTRICAL PROPERTY; GLASS SUBSTRATES; I-V MEASUREMENTS; MULTI-LAYERED; NI METAL; OPTICAL TRANSPARENCY; OXIDE SEMICONDUCTOR; P-N HETEROJUNCTIONS; P-TYPE; PN JUNCTION DIODES; RECTIFYING CHARACTERISTICS; RF-MAGNETRON SPUTTERING; ROOM TEMPERATURE; SAMPLE PREPARATION; SINGLE PHASIS; SN-DOPED; SRCU 2O 2; XRD PATTERNS;

ALUMINUM; CARRIER CONCENTRATION; DIODES; ELECTRIC PROPERTIES; HETEROJUNCTIONS; MAGNETRON SPUTTERING; OPTICAL PROPERTIES; SUBSTRATES; TIN; ZINC OXIDE;

SEMICONDUCTOR DIODES;

EID: 84655167761     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2011.05.111     Document Type: Conference Paper

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