n-ZnO/p-GaN/α-Al2O3 heterojunction as a promising blue light emitting system

Journal of Optoelectronics and Advanced Materials

Volumn 5, Issue 4, 2003, Pages 899-902

  Ataev, B M ^a   Alivov, Ya I ^b   Nikitenko, V A ^c   Chukichev, M V ^d   Mamedov, V V ^a   Makhmudov, S Sh ^a  

^a INSTITUTE OF PHYSICS   (Russian Federation)

^b INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^c RUSSIAN UNIVERSITY OF TRANSPORT   (Russian Federation)

^d MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

Electroluminescence; Emission; N ZnO p GaN heterojunction

Indexed keywords

ELECTROLUMINESCENCE; FILM PREPARATION; GALLIUM NITRIDE; LIGHT EMISSION; MAGNESIUM PRINTING PLATES; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING; ZINC OXIDE;

HIGH-ENERGY RADIATIONS; LIGHT EMITTING SYSTEMS;

HETEROJUNCTIONS;

EID: 0347595245     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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