Near infrared electroluminescence from n-InN/p-NiO heterojunction light-emitting diode

Materials Research Express

Volumn 2, Issue 3, 2015, Pages

  Zhao, Yang ^a   Wang, Hui ^b   Wu, Guoguang ^a   Jing, Qiang ^a   Gao, Fubin ^a   Li, Wancheng ^a   Zhang, Baolin ^a   Du, Guotong ^a,c  

^a JILIN UNIVERSITY   (China)

^b HENAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^c DALIAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Electroluminescence; Heterojunction; Indium nitride; PAMBE

Indexed keywords

ELECTRIC RECTIFIERS; ELECTROLUMINESCENCE; HETEROJUNCTIONS; III-V SEMICONDUCTORS; INFRARED DEVICES; LIGHT EMITTING DIODES; MAGNETRON SPUTTERING; MOLECULAR BEAM EPITAXY; NICKEL OXIDE; PHOTOLUMINESCENCE SPECTROSCOPY; SAPPHIRE; SEMICONDUCTING FILMS;

BAND-EDGE EMISSIONS; C-PLANE SAPPHIRE SUBSTRATES; INDIUM NITRIDE; NEAR-INFRARED EMISSIONS; PAMBE; PHOTOLUMINESCENCE SPECTRUM; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; RADIO FREQUENCY MAGNETRON SPUTTERING;

INDIUM COMPOUNDS;

EID: 84929365321     PISSN: None     EISSN: 20531591     Source Type: Journal    
DOI: 10.1088/2053-1591/2/3/035901     Document Type: Article

References (28)

1. Davydov V Y et al 2002 Phys. Status Solidi 229 R1
2. Lin W, Li S and Kang J 2010 Appl. Phys. Lett. 96 101115
3. Wang X Q, Zhao G Z, Zhang Q, Ishitani Y, Yoshikawa A and Shen B 2010 Appl. Phys. Lett. 96 061907
4. Park I K and Park S J 2011 Appl. Phys. Express 4 042102
5. Wei S H, Nie X, Batyrev I G and Zhang S B 2003 Phys. Rev. B 67 165209
6. Bhuiyan A G, Hashimoto A and Yamamoto A 2003 J. Appl. Phys. 94 2779
7. Katsidis C C, Ajagunna A O and Georgakilas A 2013 J. Appl. Phys. 113 073502
8. Tekcan B, Alkis S, Alevli M, Dietz N, Ortac B, Biyikli N and Okyay A K 2014 Electron Device Lett. 35 936
9. Keller S, Ben-Yaacov I, Den Baars S P and Mishra U K 2000 IPAP Conf. Ser. 1 233
10. Lu H, Schaff J W, Eastman F L and Wood C 2002 Mater. Res. Soc. Symp. Proc. 693 9
11. Wu G G, Li W C, Shen C S, Gao F B, Liang H W, Wang H, Song L J and Du G T 2012 Appl. Phys. Lett. 100 103504
12. Park Y T, Choi S Y, Kim M S, Jung Y G, Park J S, Kwon J B and Cho H Y 2011 Appl. Phys. Lett. 98 251111
13. Shih T Y, Wu K M, Li C W, Kuan H, Yang R J, Makoto S and Chen J M 2009 J. Nanotechnol. 20 165201
14. Sachindra D N, Choi H J, Jyoti K P, Lee I T and Myoung M J 2010 Mater. Chem. Phys. 121 472
15. Zhang Y J, Zhang F Q, Deng S T and Wu L J 2009 Appl. Phys. Lett. 95 211107
16. Chuan T B, Soo C J and Kian L P 2010 J. Phys. Chem.C114 9981
17. Sato H, Minami T, Takata S and Yamada T 1993 Thin Solid Films 236 27
18. Wang K, Vygranenko Y and Nathan A 2008 Thin Solid Films 516 1640
19. Mistry B, Bhatt P, Bhavsar K, Trivedi S, Trivedi U and Joshi U 2011 Thin Solid Films 519 3840
20. Wang H, Zhang B L,Wu G G, Wu C, Shi Z F, Zhao Y, Wang J, Ma Y, Du G T and Dong X 2012 Chin. Phys. Lett. 29 107304
21. Long H, Fang G J, Huang H H, Mo X M, Xia W, Dong B Z, Meng X Q and Zhao X Z 2009 Appl. Phys. Lett. 95 013509
22. Deng R, Yao B, Li Y F, Xu Y, Li J C, Li B H, Zhang Z Z, Zhang L G, Zhao H F and Shen D Z 2013 J. Lumin. 134 240
23. Zhao Y, Wang H, Wu G G, Jing Q, Gao F B, Li W C, Zhang B L and Du G T 2015 Vacuum 111 15
24. Shi Z F, Xia X C, Yin W, Zhang S K, Wang H, Wang J, Zhao L, Dong X, Zhang B L and Du G T 2012 Appl. Phys. Lett. 100 101112
25. Gwo S, Wu C L, Shen C H, Chang W H, Hsu T M, Wang J S and Hsu J T 2004 Appl. Phys. Lett. 84 3765
26. Volkov V V, Wang Z L and Zou B S 2001 Chem. Phys. Lett. 337 117
27. King P D C et al 2008 Phys. Rev. B 77 045316
28. Wu G G, Du G T, Gao F B, Wang H, Shen C S and Li W C 2012 J. Phys. D: Appl. Phys. 45 215102