High electron mobility of epitaxial ZnO thin films on c-plane sapphire grown by multistep pulsed-laser deposition

Applied Physics Letters

Volumn 82, Issue 22, 2003, Pages 3901-3903

  Kaidashev, E M ^a,b   Lorenz, M ^a   Von Wenckstern, H ^a   Rahm, A ^a   Semmelhack, H C ^a   Han, K H ^a   Benndorf, G ^a   Bundesmann, C ^a   Hochmuth, H ^a   Grundmann, M ^a  

^a UNIVERSITY OF LEIPZIG   (Germany)

^b SOUTHERN FEDERAL UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON MOBILITY; EXCITONS; FILM GROWTH; GRAIN SIZE AND SHAPE; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; SAPPHIRE; SUBSTRATES; SURFACE STRUCTURE; X RAY DIFFRACTION ANALYSIS;

RELAXATION LAYERS;

ZINC OXIDE;

EID: 0038646291     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1578694     Document Type: Article

References (20)

1. D. S. Ginley and C. Bright, Mater. Res. Bull. 25, 15 (2000).
2. H. Kato, M. Sano, K. Miyamoto, and T. Yao, Abstracts of 2nd International Workshop on Zinc Oxide, 23-25 October 2002, Dayton, OH, edited by D. C. Look (Materials Research Society, Pittsburg, 2002). p. 4.
3. K. Nakahara, H. Takasu, P. Fons, A. Yamada, K. Matsubara, K. Ikata, and S. Niki, Abstracts of 2nd International Workshop on Zinc Oxide, 23-25 October 2002, Dayton, OH, edited by D. C. Look (Materials Research Society, Pittsburg, 2002), p. 37.
4. H. Amano, M. Iwaya, T. Kashima, M. Katsuragama, I. Akasaki, J. Han, S. Hearne, J. Floro, E. Chason, and J. Figiel, Jpn. J. Appl. Phys. 37, L1540 (1998).
5. H. Amano, M. Iwaya, N. Hayashi, T. Kashima, M. Katsuragawa, T. Takeuchi, C. Wetzel, and I. Akasaki, MRS Internet J. Nitride Semicond. Res. 4, 10 (1999).
6. C. Kisielowski, J. Krüger, S. Ruvimov, T. Suski, J. W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Dremser, and R. F. Davis, Phys. Rev. 54, 17745 (1996).
7. M. J. Manfra, L. N. Pfeiffer, K. W. West, H. L. Stolmer, K. W. Baldwin, J. W. P. Hsu, V. Lang, and R. J. Molnar, Appl. Phys. Lett. 77, 2888 (2000).
8. H. Amano, M. Iwaya, N. Hayashi, T. Kashima, S. Nitta, C. Wetzel, and I. Akasaki, Phys. Status Solidi B 216, 683 (1999).
9. J. Han, K. E. Waldrip, S. R. Lee, J. J. Figiel, S. J. Hearne, G. A. Peterson, and S. M. Mayers, Appl. Phys. Lett. 78, 67 (2001).
10. S. Choopun, R. D. Vispute, W. Noch, A. Balsamo, R. P. Sharma, T. Venkatesan, A. Ilindis, and D. C. Look, Appl. Phys. Lett. 75, 3947 (1999).
11. M. Lorenz, H. Hochmuth, D. Natusch, M. Kusunoki, V. L. Svetchnikov, V. Riede, I. Stanca, G. Kästner, and D. Hesse, IEEE Trans. Appl. Supercond. 11, 3209 (2001).
12. C. Bundesmann, M. Schubert, D. Spemann, T. Butz, M. Lorenz, E. M. Kaidashev, M. Grundmann, G. Wagner, N. Ashkenov, and H. Neumann, Appl. Phys. Lett. 81, 2376 (2002).
13. N. Ashkenov, G. Wagner, H. Neumann, B. N. Mbenkum, C. Bundesmann, V. Riede, M. Lorenz, E. M. Kaidashev, A. Kasic, M. Schubert, and M. Grundmann, J. Appl. Phys. 93, 126 (2003).
14. G. Koster, G. J. H. Rijnders, D. H. Blank, and H. Rogalla, Appl. Phys. Lett. 74, 3729 (1999).
15. E. M. Kaidashev, Ph.D. thesis, Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Moscow, 1995 [in Russian].
16. M. K. Puchert, P. Y. Timbrell, and R. N. Lamb, J. Vac. Sci. Technol. A 14, 220 (1996).
17. R. Schmidt, B. Rheinländer, M. Schubert, D. Spemann, T. Butz, E. M. Kaidashev, M. Lorenz, and M. Grundmann, Appl. Phys. Lett. 82, 2260 (2003).
18. N. Ohashi, I. Sakaguchi, S. Hishita, Y. Adachi, H. Hareda, and T. Ogino, J. Appl. Phys. 92, 2378 (2002).
19. H. M. Ng, D. Doppalapudi, T. D. Moustakas, N. G. Weimann, and L. F. Eastman. Appl. Phys. Lett. 73, 821 (1998).
20. N. G. Weinmann, L. F. Eastmann, D. Doppalapudi, H. M. Ng, and T. D. Moustakas, J. Appl. Phys. 83, 3656 (1998).