First-principles study of bipolar dopability in the CuInO2 transparent semiconductor

Chemistry of Materials

Volumn 17, Issue 22, 2005, Pages 5529-5537

  Liu, Li ^a,b   Bai, Kewu ^a   Gong, Hao ^b   Wu, Ping ^a  

^a INSTITUTE OF HIGH PERFORMANCE COMPUTING   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC STRUCTURE; POINT DEFECTS; PROBABILITY DENSITY FUNCTION; SEMICONDUCTOR DOPING;

BIPOLAR DOPABILITY; DEFECT FORMATION; NEUTRAL STATES; PRACTICAL GUIDANCE;

COPPER COMPOUNDS;

EID: 27744480402     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm051048k     Document Type: Article

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