Low-voltage-operation avalanche photodiode based on n-gallium oxide/p-crystalline selenium heterojunction

Applied Physics Letters

Volumn 104, Issue 24, 2014, Pages

  Imura, S ^a   Kikuchi, K ^a   Miyakawa, K ^a   Ohtake, H ^a   Kubota, M ^a  

^a NHK SCIENCE AND TECHNICAL RESEARCH LABORATORIES   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC FIELDS; HETEROJUNCTIONS; PHOTODIODES; SELENIUM; THRESHOLD VOLTAGE; TIN COMPOUNDS; VANADIUM COMPOUNDS;

AVALANCHE MULTIPLICATION; EXTERNAL QUANTUM EFFICIENCY; HETEROJUNCTION PHOTODIODES; HIGH ELECTRIC FIELDS; HOLE INJECTION BARRIERS; LOW VOLTAGE OPERATION; REVERSE BIAS VOLTAGE; SHORT WAVELENGTHS;

GALLIUM COMPOUNDS;

EID: 84903148637     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4883649     Document Type: Article

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