Deep ultraviolet photodiodes based on β-Ga2O 3/SiC heterojunction

Applied Physics Letters

Volumn 103, Issue 7, 2013, Pages

  Nakagomi, Shinji ^a   Momo, Toshihiro ^a   Takahashi, Syuhei ^a   Kokubun, Yoshihiro ^a  

^a ISHINOMAKI SENSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP ULTRAVIOLET; DEEP-ULTRAVIOLET PHOTODIODES; LIGHT INTENSITY; OXYGEN PLASMAS; RECTIFYING PROPERTIES; REVERSE BIAS; SIC SUBSTRATES; UV SENSITIVITY;

ENERGY GAP; GALLIUM; HETEROJUNCTIONS; PHOTODIODES; SILICON CARBIDE;

GALLIUM ALLOYS;

EID: 84882392678     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4818620     Document Type: Article

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