Electrical conductivity and carrier concentration control in Β- Ga2O3 by Si doping

Applied Physics Letters

Volumn 92, Issue 20, 2008, Pages

  Víllora, Encarnación G ^a   Shimamura, Kiyoshi ^a   Yoshikawa, Yukio ^b   Ujiie, Takekazu ^b   Aoki, Kazuo ^b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b Koha Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRIC CONDUCTANCE; ELECTRIC CONDUCTIVITY; OXYGEN VACANCIES;

DOPING LEVELS; FREE CARRIER CONCENTRATION; OXYGEN DEFICIENCY;

GALLIUM COMPOUNDS;

EID: 44349126632     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2919728     Document Type: Article

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