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Volumn 4, Issue , 2014, Pages

Thin film complementary metal oxide semiconductor (CMOS) device using a single-step deposition of the channel layer

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Indexed keywords


EID: 84898638003     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep04672     Document Type: Article
Times cited : (115)

References (30)
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