Fabrication of p-type conductivity in SnO2 thin films through Ga doping

Journal of Alloys and Compounds

Volumn 622, Issue , 2015, Pages 644-650

  Tsay, Chien Yie ^a   Liang, Shan Chien ^a  

^a FENG CHIA UNIVERSITY   (Taiwan)

Author keywords

Electrical properties; p n junction; P type oxide semiconductor; Sol gel spin coating; Tin oxide

Indexed keywords

COATINGS; ELECTRIC PROPERTIES; ENERGY GAP; FABRICATION; GLASS; HETEROJUNCTIONS; HOLE CONCENTRATION; OXIDE FILMS; OXIDE MINERALS; OXIDE SEMICONDUCTORS; SEMICONDUCTING FILMS; SEMICONDUCTING TIN COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SOL-GEL PROCESS; SOL-GELS; SPIN GLASS; SUBSTRATES; TIN OXIDES; TITANIUM DIOXIDE;

OPTICAL AND ELECTRICAL PROPERTIES; OPTICAL BAND GAP ENERGY; P-N JUNCTION; P-TYPE OXIDE SEMICONDUCTORS; RECTIFYING CHARACTERISTICS; SEMICONDUCTOR THIN FILMS; SOL-GEL SPIN COATING; SOL-GEL SPIN COATING METHOD;

THIN FILMS;

EID: 84911191319     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2014.10.003     Document Type: Article

References (41)

1. R.M. Pasquarelli, D.S. Ginley, and R. O'Hayre Solution processing of transparent conductors: from flask to film Chem. Soc. Rev. 40 2011 5406 5441
2. H. Hosono Recent progress in transparent oxide semiconductors: materials and device application Thin Solid Films 515 2007 6000 6014
3. C.W. Ou, Dhananjay, Z.Y. Ho, Y.C. Chuang, S.S. Cheng, M.C. Wu, K.C. Ho, and C.W. Chu Anomalous p-channel amorphous oxide transistors based on tin oxide and their complementary circuits Appl. Phys. Lett. 92 2008 122113
4. 2:Zn films deposited using a simplified spray pyrolysis technique Superlattices Microstruct. 60 2013 327 335
5. 3 thin film transistors Appl. Phys. Lett. 92 2008 232103
6. G. Mandel, F.F. Morehead, and P.R. Wagner Self-compensation-limited conductivity in binary semiconductors. III. Expected correlations with fundamental parameters Phys. Rev. 136 1964 A826 A832
7. 2: first-principles calculations Phys. Rev. B 79 2009 245206
8. L.G. Wang, and A. Zunger Cluster-doping approach for wide-gap semiconductors: the case of p-type ZnO Phys. Rev. Lett. 90 2003 256401
9. 2 thin films Thin Solid Films 518 2010 5542 5545
10. 2 Phys. Rev. Lett. 101 2008 055502
11. M. Batzill, and U. Diebold The surface and materials science of tin oxide Prog. Surf. Sci. 79 2005 47 154
12. R. Dolbec, M.A. El Khakani, A.M. Serventi, M. Trudeau, and R.G. Saint Jacques Microstructure and physical properties of nanostructured tin oxide thin films grown by means of pulsed laser deposition Thin Solid Films 419 2002 230 236
13. 2 transparent conducting thin films Appl. Phys. A 63 1996 347 351
14. 2 gas sensors fabricated by the mechanochemical processing technique Sens. Actuators B 93 2003 562 565
15. 2 core-shell nanowires Nanoscale 4 2012 5710 5717
16. J.J. Teh, S.L. Ting, K.C. Leong, J. Li, and P. Chen Gallium-doped tin oxide nano-cuboids for improved dye sensitized solar cell ACS Appl. Mater. Interf. 5 2013 11377 11382
17. 2 p-type ohmic contact for near-UV GaN-based LEDs by a CIO interlayer Electrochem. Solid State Lett. 10 2007 H254 H256
18. R.E. Presley, C.L. Munsee, C.H. Park, D. Hong, J.F. Wager, and D.A. Keszler Tin oxide transparent thin-film transistors J. Phys. D: Appl. Phys. 37 2004 2810 2813
19. 2 J. Alloys Compd. 579 2013 50 56
20. 2:Al films for novel transparent electronics applications J. Mater. Sci. Technol. 30 2014 97 102
21. 3 (0001) by MOCVD J. Lumines. 130 2010 1189 1193
22. 2 thin films deposited by sol gel technique J. Mater. Sci.: Mater. Electron. 25 2014 1664 1672
23. C.Y. Tsay, and W.C. Lee Effect of dopants on the structural, optical and electrical properties of sol-gel derived ZnO semiconductor thin films Curr. Appl. Phys. 13 2013 60 65
24. Y. Huang, Z. Ji, and C. Chen Preparation and characterization of p-type transparent conducting tin-gallium oxide films Appl. Surf. Sci. 253 2007 4819 4822
25. J. Hu, and R.G. Gordon Atmospheric pressure chemical vapor deposition of gallium doped zinc oxide thin films from diethyl zinc, water, and triethyl gallium J. Appl. Phys. 72 1992 5381 5392
26. 2 nanostructured thin films prepared by sol-gel process Appl. Phys. A 108 2012 693 700
27. 2 coating films Chem. Phys. 68 2001 253 259
28. T. Ishihara, K. Matsuzawa, M. Takayanagi, and S.I. Takagi Comprehensive understanding of electron and hole mobility limited by surface roughness scattering in pure oxides and oxynitrides based on correlation function of surface roughness Jpn. J. Appl. Phys. 41 2002 2353 2358
29. I. Volintiru, M. Creatore, B. Kniknie, C.I.M.A. Spee, and M.C.M. van de Sanden Evolution of the electrical and structural properties during the growth of Al doped ZnO films by remote plasma-enhanced metalorganic chemical vapor deposition J. Appl. Phys. 102 2007 043709
30. J. Tauc Optical properties and electronic structure of amorphous Ge and Si Mater. Res. Bull. 3 1968 37 46
31. A.K. Sinha, P.K. Manna, M. Pradhan, C. Mondal, S.M. Yusuf, and T. Pal Tin oxide with a p-n heterojunction ensures both UV and visible light photocatalytic activity RSC Adv. 4 2014 208 211
32. 2 nanoparticles synthesized by sol-gel method J. Phys. Chem. B 108 2004 8119 8123
33. 2:Co thin films prepared by sol-gel spin coating technique Mater. Res. Bull. 48 2013 1468 1476
34. 2 nanocomposites Nanotechnology 17 2006 2860 2864
35. Sk.F. Ahmed, S. Khan, P.K. Ghosh, M.K. Mitra, and K.K. Chattopadhyay Effect of Al doping on the conductivity type inversion and electro-optical properties of SnO2 thin films synthesized by sol-gel technique J. Sol-Gel Sci. Technol. 39 2006 241 247
36. 2 thin films J. Cryst. Growth 259 2003 282 285
37. C.D. Wagner, W.M. Riggs, L.E. Davis, J.F. Moulder, G.E. Muilenberg, Handbook of X-ray Photoelectron Spectroscopy (Perkin-Elmer Corp., Minnesota USA1979) pp. 118.
38. S.Y. Kim, J.L. Lee, K.B. Kim, and Y.H. Tak Effect of ultraviolet-ozone treatment of indium-tin-oxide on electrical properties of organic light emitting diodes J. Appl. Phys. 95 2004 2560 2563
39. 2 thin film J. Mater. Sci. Lett. 5 1986 63 65
40. F.M. Hossain, J. Nishii, S. Takagi, A. Ohtomo, T. Fukumura, H. Fujioka, H. Ohno, H. Koinuma, and M. Kawasaki Modeling and simulation of polycrystalline ZnO thin-film transistors J. Appl. Phys. 94 2003 7768 7777
41. 2 films via pulsed laser deposition method by using Sb as dopant Appl. Surf. Sci. 286 2013 417 420