Ultraviolet-enhanced photodiode employing n-ZnO/p-Si structure

Applied Physics Letters

Volumn 83, Issue 14, 2003, Pages 2946-2948

  Jeong, I S ^a   Kim, Jae ^a   Im, Seongil ^a  

^a Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; PHOTOCURRENTS; PHOTONS; SILICON; ZINC OXIDE;

BAND GAP;

PHOTODIODES;

EID: 0142229525     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1616663     Document Type: Article

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