Nitrogen doped p-type ZnO films and p-n homojunction

Semiconductor Science and Technology

Volumn 30, Issue 1, 2015, Pages

  Snigurenko, D ^a   Kopalko, K ^a   Krajewski, T A ^a   Jakiela, R ^a   Guziewicz, E ^a  

^a INSTITUTE OF PHYSICS   (Poland)

Author keywords

ALD; homojunction; I V; nitrogen; ZnO

Indexed keywords

ATOMIC LAYER DEPOSITION; DOPING (ADDITIVES); METALLIC FILMS; NITROGEN; SEMICONDUCTING FILMS; TEMPERATURE;

HOMOJUNCTION; LOW TEMPERATURE GROWTH; NITROGEN ATMOSPHERES; OXYGEN PRECURSORS; P TYPE CONDUCTIVITY; P-N HOMOJUNCTIONS; P-TYPE ZNO FILM; RECTIFICATION RATIO;

ZINC OXIDE;

EID: 84920385737     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/30/1/015001     Document Type: Article

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