Room-temperature-processed flexible n-InGaZnO/p-Cu2O heterojunction diodes and high-frequency diode rectifiers

Journal of Physics D: Applied Physics

Volumn 47, Issue 36, 2014, Pages

  Chen, Wei Chung ^a   Hsu, Po Ching ^a   Chien, Chih Wei ^a   Chang, Kuei Ming ^a   Hsu, Chao Jui ^a   Chang, Ching Hsiang ^a   Lee, Wei Kai ^a   Chou, Wen Fang ^a   Hsieh, Hsing Hung ^b   Wu, Chung Chih ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b Polyera Taiwan Corp   (Taiwan)

Author keywords

diode; flexible electronics; oxide semiconductors; rectifier; RFID

Indexed keywords

COPPER; DIODES; ELECTRIC RECTIFIERS; FLEXIBLE ELECTRONICS; FREQUENCY RESPONSE; HETEROJUNCTIONS; RADIO FREQUENCY IDENTIFICATION (RFID); SUBSTRATES;

DIODE CHARACTERISTICS; HETEROJUNCTION DIODES; HIGH FREQUENCY OPERATION; OXIDE SEMICONDUCTOR; POLYETHYLENE NAPHTHALATE; RECTIFICATION RATIO; RECTIFIER; SPUTTERING TECHNIQUES;

SEMICONDUCTOR DIODES;

EID: 84906542976     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/47/36/365101     Document Type: Article

References (27)

1. Chuang T-H, Hsieh H-H, Chen C-K, Wu C-C, Lin C-C, Chou P-T, Chao T-H and Chow T-J 2008 Org. Lett. 10 2869
2. Chen C-K, Hsieh H-H, Shyue J-J and Wu C-C 2009 IEEE/OSA J. Disp. Technol. 5 515
3. Ko S H, Pan H, Grigoropoulos C P, Luscombe C K, Fréchet J M J and Poulikakos D 2007 Nanotechnology 18 345202 (Pubitemid 47228436)
4. Subramanian V, Chang P C, Lee J B, Molesa S E and Volkman S K 2005 IEEE Trans. Compon. Packag. Technol. 28 742 (Pubitemid 41825214)
5. Lee B and Yu B 2008 Microw. Opt. Technol. Lett. 50 232
6. Kurs A, Karalis A, Moffatt R, Joannopoulos J D, Fisher P and Soljacic M 2007 Science 317 83 (Pubitemid 47056459)
7. Abe H, Sakamoto H and Harada K 2000 IEEE Trans. Industry Appl. 36 444 (Pubitemid 30593852)
8. Brown W C 1984 IEEE Trans. Microw. Theory Tech. 32 1230
9. Sekitani T, Takamiya M, Noguchi Y, Nakano S, Kato Y, Sakurai T and Someya T 2007 Nature Mater. 6 413 (Pubitemid 46876484)
10. Lin C-Y, Tsai C-H, Lin H-T, Chang L-C, Yeh Y-H, Pei Z, Peng Y-R and Wu C-C 2011 Org. Electron. 12 1777
11. Pal B N, Sun J, Jung B J, Choi E, Andreou A G and Katz H E 2008 Adv. Mater. 20 1023
12. Kang C, Kim S, Hong Y and Lee C 2009 Thin Solid Films 518 889
13. Krumm J, Eckert E, Glauert W H, Ullmann A, Fix W and Clemens W 2004 IEEE Electron Device Lett. 25 399
14. Kudo A, Yanagi H, Ueda K, Hosono H, Kawazoe H and Yano Y 1999 Appl. Phys. Lett. 75 2851
15. Ohta H, Hirano M, Nakahara K, Maruta H, Tanabe T, Kamiya M, Kamiya T and Hosono H 2003 Appl. Phys. Lett. 83 1029
16. Gupta R K, Ghosh K and Kahol P K 2009 Physica E 41 617
17. Narushima S, Ueda K, Mizoguchi H, Ohta H, Hirano M, Shimizu K, Kamiya T and Hosono H 2003 Adv. Mater. 15 1409
18. Münzenrieder N, Zysset C, Petti L, Kinkeldei T, Salvatore G A and Tröster G 2013 Solid-State Electron. 87 17
19. Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M and Hosono H 2004 Nature 432 488 (Pubitemid 39585210)
20. Yang W-Y, Kim W-G and Rhee S-W 2008 Thin Solid Films 517 967
21. Viet Pham T, Rao M, Andreasson P, Peng Y, Wang J and Jinesh K B 2013 Appl. Phys. Lett. 102 032101
22. Sedra A S and Smith K C 2004 Microelectronic Circuits (New York: Oxford University Press) p 180
23. Reddy A S, Rao G V, Uthanna S and Reddy P S 2006 Mater. Lett. 60 1617
24. Lee K, Nomura K, Yanagi H, Kamiya T and Hosono H 2011 Electrochem. Solid-State Lett. 14 H346
25. Shah J M, Li Y L, Gessmann Th and Schubert E F 2003 J. Appl. Phys. 94 2627
26. Sze S M 1981 Physics of Semiconductor Devices (New York: Wiley) p 124
27. O'Keeffe M 1963 J. Chem. Phys. 39 1789