Transparent p-type AlN:SnO 2 and p-AlN:SnO 2/n-SnO 2:In 2O 3 p-n junction fabrication

Applied Physics Letters

Volumn 101, Issue 12, 2012, Pages

  Liu, Y S ^a   Hsieh, C I ^a   Wu, Y J ^a   Wei, Y S ^a   Lee, P M ^a   Liu, C Y ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

IDEALITY FACTORS; LOW-LEAKAGE CURRENT; P-N JUNCTION; P-TYPE; P-TYPE ALN; XPS ANALYSIS;

SEMICONDUCTOR JUNCTIONS; SUBSTITUTION REACTIONS; TIN;

THIN FILMS;

EID: 84866840077     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4754134     Document Type: Article

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