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Volumn 5, Issue , 2015, Pages

Low temperature processed Complementary Metal Oxide Semiconductor (CMOS) device by oxidation effect from capping layer

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EID: 84928157531     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep09617     Document Type: Article
Times cited : (60)

References (20)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.