Fabrication of transparent p-n heterojunction thin film diodes based entirely on oxide semiconductors

Applied Physics Letters

Volumn 75, Issue 18, 1999, Pages 2851-2853

  Kudo, Atsushi ^a   Yanagi, Hiroshi ^a   Ueda, Kazushige ^a   Hosono, Hideo ^a   Kawazoe, Hiroshi ^a   Yano, Yoshihiko ^b  

^a Tokyo Institute of Technology ^*  (Japan)

^b TDK CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001064482     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125171     Document Type: Article

References (6)

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2. H. Kawazoe, M. Yasukawa, H. Hyodo, M. Kurita, H. Yanagi, and H. Hosono, Nature (London) 389, 939 (1997).
3. H. Yanagi, H. Kawazoe, A. Kudo, M. Yasukawa, and H. Hosono, J. Electroceram. (to be published).
4. A. Kudo, H. Yanagi, H. Hosono, and H. Kawazoe, Appl. Phys. Lett. 73, 220 (1998).
5. A. Barker, S. Crowther, and D. Rees, Sens. Actuators A 58, 229 (1997).
6. Landolt-Börnstein, in New Series, 17b, edited by O. Madelung (Springer, Berlin, 1982).