Metal-oxide complementary inverters with a vertical geometry fabricated on flexible substrates

Applied Physics Letters

Volumn 99, Issue 17, 2011, Pages

  Dindar, A ^a   Kim, J B ^a   Fuentes Hernandez, C ^a   Kippelen, B ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL THICKNESS; COMPLEMENTARY INVERTERS; COPPER OXIDE LAYERS; FLEXIBLE SUBSTRATE; INDIUM GALLIUM ZINC OXIDES; METAL-OXIDE; N-CHANNEL; OXYGEN DIFFUSION; POLYETHERSULFONES; PROCESSING TEMPERATURE; SATURATION MOBILITY;

ETHERS; FABRICATION; GALLIUM; GALLIUM ALLOYS; INDIUM; PROCESSING; SUBSTRATES; THIN FILM DEVICES; THIN FILM TRANSISTORS; ZINC OXIDE;

COPPER;

EID: 80555129542     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3656974     Document Type: Article

References (17)

1. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature 432, 488 (2004). 10.1038/nature03090 (Pubitemid 39585210)
2. H. Raebiger, S. Lany, and A. Zunger, Phys. Rev. B 76, 045209 (2007). 10.1103/PhysRevB.76.045209
3. S. Lany and A. Zunger, Phys. Rev. Lett. 98, 045501 (2007). 10.1103/PhysRevLett.98.045501 (Pubitemid 46155740)
4. D. O. Scanlon, A. Walsh, and G. W. Watson, Chem. Mater. 21, 4568 (2009). 10.1021/cm9015113
5. M. Snure and A. Tiwari, Appl. Phys. Lett. 91, 092123 (2007). 10.1063/1.2778755 (Pubitemid 47352308)
6. J. P. Hu, D. J. Payne, R. G. Egdell, P. A. Glans, T. Learmonth, K. E. Smith, J. Guo, and N. M. Harrison, Phys. Rev. B 77, 155115 (2008). 10.1103/PhysRevB.77.155115
7. D. O. Scanlon, B. J. Morgan, G. W. Watson, and A. Walsh, Phys. Rev. Lett. 103, 096405 (2009). 10.1103/PhysRevLett.103.096405
8. E. Fortunato, V. Figueiredo, P. Barquinha, E. Elamurugu, R. Barros, G. Goncalves, S. H. K. Park, C. S. Hwang, and R. Martins, Appl. Phys. Lett. 96, 192102 (2010). 10.1063/1.3428434
9. E. Fortunato, V. Figueiredo, P. Barquinha, E. Elamurugu, R. Barros, G. Goncalves, S. H. K. Park, C. S. Hwang, and R. Martins, Appl. Phys. Lett. 96, 239902 (2010). 10.1063/1.3449139
10. E. Fortunato, R. Barros, P. Barquinha, V. Figueiredo, S. H. K. Park, C. S. Hwang, and R. Martins, Appl. Phys. Lett. 97, 052105 (2010). 10.1063/1.3469939
11. S. Y. Sung, S. Y. Kim, K. M. Jo, J. H. Lee, J. J. Kim, S. G. Kim, K. H. Chai, S. J. Pearton, D. P. Norton, and Y. W. Heo, Appl. Phys. Lett. 97, 222109 (2010). 10.1063/1.3521310
12. W. E. Bowen, W. M. Wang, and J. D. Phillips, IEEE Electron Device Lett. 30, 1314 (2009). 10.1109/LED.2009.2033949
13. K. Dhananjay, C. W. Chu, C. W. Ou, M. C. Wu, Z. Y. Ho, K. C. Ho, and S. W. Lee, Appl. Phys. Lett. 92, 232103 (2008). 10.1063/1.2936275
14. T. H. Hwang, I. S. Yang, O. K. Kwon, M. K. Ryu, C. W. Byun, C. S. Hwang, and S. H. K. Park, Jpn. J. Appl. Phys. 50, 03CB06-1 (2011).
15. J. B. Kim, C. Fuentes-Hernandez, D. K. Hwang, W. J. Potscavage, H. Cheun, and B. Kippelen, Org. Electron. 12, 45 (2011). 10.1016/j.orgel.2010.10.012
16. J. B. Kim, C. Fuentes-Hernandez, S. J. Kim, S. Choi, and B. Kippelen, Org. Electron. 11, 1074 (2010). 10.1016/j.orgel.2010.03.008
17. J. Ghijsen, L. H. Tjeng, J. van Elp, H. Eskes, J. Westerink, G. A. Sawatzky, and M. T. Czyzyk, Phys. Rev. B 38, 11322 (1988). 10.1103/PhysRevB.38. 11322