Fabrication and photoresponse of a pn-heterojunction diode composed of transparent oxide semiconductors, p-NiO and n-ZnO

Applied Physics Letters

Volumn 83, Issue 5, 2003, Pages 1029-1031

  Ohta, Hiromichi ^a   Hirano, Masahiro ^a   Nakahara, Ken ^b   Maruta, Hideaki ^b   Tanabe, Tetsuhiro ^b   Kamiya, Masao ^c   Kamiya, Toshio ^c   Hosono, Hideo ^c  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b ROHM CO LTD   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; DRY ETCHING; EPITAXIAL GROWTH; HETEROJUNCTIONS; HIGH RESOLUTION ELECTRON MICROSCOPY; IRRADIATION; LIGHT ABSORPTION; PHOTOSENSITIVITY; PULSED LASER DEPOSITION; THRESHOLD VOLTAGE; ULTRAVIOLET SPECTROSCOPY; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

BIASING EFFECTS;

SEMICONDUCTOR DIODES;

EID: 0042878668     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1598624     Document Type: Article

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