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Volumn 82, Issue 5, 2003, Pages 823-825

Fabrication and characterization of heteroepitaxial p-n junction diode composed of wide-gap oxide semiconductors p-ZnRh2O4/n-Zno

(6) Ohta, Hiromichi a Mizoguchi, Hiroshi a,c Hirano, Masahiro a Narushima, Satoru b Kamiya, Toshio b Hosono, Hideo b

a JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

b TOKYO INSTITUTE OF TECHNOLOGY (Japan)

c OHIO STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING ZINC COMPOUNDS; SINGLE CRYSTALS; THRESHOLD VOLTAGE; ULTRAVIOLET RADIATION;

SOLID-PHASE EPITAXY TECHNIQUE;

HETEROJUNCTIONS;

EID: 0037415916 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1544436 Document Type: Article

Times cited : (120)

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