Deep acceptor states in ZnO single crystals

Applied Physics Letters

Volumn 89, Issue 9, 2006, Pages

  Von Wenckstern, H ^a   Pickenhain, R ^a   Schmidt, H ^a   Brandt, M ^a   Biehne, G ^a   Lorenz, M ^a   Grundmann, M ^a   Brauer, G ^b  

^a UNIVERSITY OF LEIPZIG   (Germany)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DEEP LEVEL TRANSIENT SPECTROSCOPY; IONS; NITROGEN; SEMICONDUCTOR JUNCTIONS; ZINC OXIDE;

BROAD ACCEPTORLIKE DEFECT BAND; P-N JUNCTION; THERMAL ACTIVATION ENERGIES; ZNO WAFER;

SINGLE CRYSTALS;

EID: 33748272309     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2335798     Document Type: Article

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