UV-detector based on pn-heterojunction diode composed of transparent oxide semiconductors, p-NiO/n-ZnO

Thin Solid Films

Volumn 445, Issue 2, 2003, Pages 317-321

  Ohta, Hiromichi ^a   Kamiya, Masao ^b   Kamiya, Toshio ^a,b   Hirano, Masahiro ^a   Hosono, Hideo ^a,b  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Nickel oxide; Optoelectronic devices; Photoconductivity; Solid phase epitaxy; Zinc oxide

Indexed keywords

CRYSTAL STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; ENERGY GAP; NICKEL COMPOUNDS; OPTOELECTRONIC DEVICES; SINGLE CRYSTALS; ULTRAVIOLET DETECTORS; ZINC OXIDE;

SOLID-PHASE-EPITAXY; WIDE-GAP SEMICONDUCTORS;

HETEROJUNCTIONS;

EID: 1642379408     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)01178-7     Document Type: Conference Paper

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