Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

Nature

Volumn 432, Issue 7016, 2004, Pages 488-492

  Nomura, Kenji ^a   Ohta, Hiromichi ^a   Takagi, Akihiro ^a   Kamiya, Toshio ^a   Hirano, Masahiro ^a   Hosono, Hideo ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; HYDROGENATION; LIGHT EMITTING DIODES; POLYETHYLENE TEREPHTHALATES; SATURATION (MATERIALS COMPOSITION); SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR MATERIALS; WEARABLE COMPUTERS;

FLEXIBLE SUBSTRATES; HIGH-PERFORMANCE DEVICES; ROOM TEMPERATURE (RT); SATURATION MOBILITIES;

THIN FILM TRANSISTORS;

GALLIUM; OXIDE; POLYETHYLENE TEREPHTHALATE; SILICON; ZINC;

ELECTRONICS INDUSTRY;

ARTICLE; DEVICE; ELECTRONICS; FILM; HYDROGENATION; LIGHT EMITTING DIODE; PERFORMANCE; PRIORITY JOURNAL; ROOM TEMPERATURE; SEMICONDUCTOR;

EID: 9744248669     PISSN: 00280836     EISSN: None     Source Type: Journal    
DOI: 10.1038/nature03090     Document Type: Article

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