Photoresponse of n-ZnO/p-SiC heterojunction diodes grown by plasma-assisted molecular-beam epitaxy

Applied Physics Letters

Volumn 86, Issue 24, 2005, Pages 1-3

  Alivov, Ya I ^a   Ozgur U ^a   Dogan S ^a,b   Johnstone, D ^a   Avrutin, V ^a   Onojima, N ^a   Liu, C ^a   Xie, J ^a   Fan, Q ^a   Morko H ^a  

^a Virginia Commonwealth University   (United States)

^b ATATÜRK UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

LOW-TEMPERATURE DEPOSITION; PHOTON ENERGIES; PHOTORESPONSIVITY; ROOM TEMPERATURE;

ALUMINUM NITRIDE; COPPER OXIDES; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; GALLIUM NITRIDE; HETEROJUNCTIONS; LOW TEMPERATURE OPERATIONS; MOLECULAR BEAM EPITAXY; NICKEL COMPOUNDS; PHOTONS; SEMICONDUCTING FILMS; SEMICONDUCTING ZINC COMPOUNDS; SILICON CARBIDE; ZINC OXIDE;

SEMICONDUCTOR DIODES;

EID: 21344460455     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1949730     Document Type: Article

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