Fabrication of homostructural ZnO p-n junctions

Journal of Crystal Growth

Volumn 219, Issue 4, 2000, Pages 419-422

  Ryu, Y R ^a   Kim, W J ^b   White, H W ^a  

^a UNIVERSITY OF MISSOURI   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; LASER ABLATION; OXYGEN; PRESSURE EFFECTS; PULSED LASER APPLICATIONS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES; ZINC OXIDE;

HOMOSTRUCTURAL JUNCTIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 0034325665     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00731-4     Document Type: Article

References (9)

1. Reynolds D.C., Litton C.W., Collins T.C. Phys. Rev. 140:1965;1726.
2. Park Y.S., Litton C.W., Collins T.C., Reynolds D.C. Phys. Rev. 143:1966;512.
3. Minegishi K., Koiwai Y., Kikuchi Y., Yano K., Kasuga M., Shimizu A. Jpn. J. Appl. Phys. 36:1997;L1453.
4. Ryu Y.R., Zhu S., Budai J.D., Chandrasekhar H.R., Miceli P.F., White H.W. J. Appl. Phys. 88:2000;201.
5. Ryu Y.R., Zhu S., Han S.W., White H.W. J. Vac. Sci. Technol. A. 16(5):1998;3058.
6. Ryu Y.R., Zhu S., Look D.C., Wrobel J.M., Jeong H.M., White H.W. J. Crystal Growth. 216:2000;330.
7. Hiramatsu M., Imaeda K., Horio N., Nawata M. J. Vac. Sci. Technol. A. 16:1998;669.
8. S. Nakamura, G. Fasol, The Blue Laser Diode, Vol. 87, Springer, Berlin, 1997.
9. Jeon H., Ding J., Patterson W., Nurmikko A.V., Xie W., Grillo D.C., Kobayashi M., Gunshor R.L. Appl. Phys. Lett. 59:1991;3619.