A comprehensive review of semiconductor ultraviolet photodetectors: From thin film to one-dimensional nanostructures

Sensors (Switzerland)

Volumn 13, Issue 8, 2013, Pages 10482-10518

  Sang, Liwen ^a,b   Liao, Meiyong ^a   Sumiya, Masatomo ^a,b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

One dimensional nanostructures; Semiconductor; Thin film; Ultraviolet photodetector

Indexed keywords

ENERGY GAP; FILMS; GALLIUM NITRIDE; NANOSTRUCTURES; PHOTONS; SEMICONDUCTOR MATERIALS; SILICON CARBIDE; THERMODYNAMIC STABILITY; THIN FILMS;

HIGH RESPONSE SPEED; HIGH THERMAL STABILITY; KEY CHARACTERISTICS; ONE DIMENSIONAL (1D) NANOSTRUCTURES; ONE-DIMENSIONAL NANOSTRUCTURE; SEMICONDUCTOR THIN FILMS; ULTRA-VIOLET PHOTODETECTORS; WIDE-BAND-GAP SEMICONDUCTOR;

PHOTODETECTORS;

EID: 84923065060     PISSN: 14248220     EISSN: None     Source Type: Journal    
DOI: 10.3390/s130810482     Document Type: Review

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