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Volumn 519, Issue 11, 2011, Pages 3840-3843
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Growth and properties of transparent p-NiO/n-ITO (In2O 3:Sn) p-n junction thin film diode
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Author keywords
Chemical solution deposition; Current voltage characteristics; p n junction; Transparent conducting oxide
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Indexed keywords
CARRIER DIFFUSIONS;
CHEMICAL SOLUTION DEPOSITION;
E BEAM EVAPORATION;
FILM NANOSTRUCTURES;
FORWARD BIAS;
GRAZING INCIDENCE X-RAY DIFFRACTION;
HETEROEPITAXIAL;
JUNCTION INTERFACES;
OPTICAL AND ELECTRICAL PROPERTIES;
OPTICAL TRANSPARENCY;
P-N JUNCTION;
REVERSE BIAS;
REVERSE LEAKAGE CURRENT;
SN-DOPED;
THIN FILM DIODE;
TRANSFER RESISTANCE;
TRANSPARENT CONDUCTING OXIDE;
ATOMIC FORCE MICROSCOPY;
BIAS VOLTAGE;
CHEMICALS;
DEPOSITION;
DISTILLATION;
ELECTRIC PROPERTIES;
EPITAXIAL GROWTH;
SEMICONDUCTOR JUNCTIONS;
SILICON COMPOUNDS;
THIN FILMS;
TIN;
VAPOR DEPOSITION;
X RAY DIFFRACTION;
CURRENT VOLTAGE CHARACTERISTICS;
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EID: 79952738343
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2011.01.255 Document Type: Article |
Times cited : (27)
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References (27)
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