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Volumn 519, Issue 11, 2011, Pages 3840-3843

Growth and properties of transparent p-NiO/n-ITO (In2O 3:Sn) p-n junction thin film diode

Author keywords

Chemical solution deposition; Current voltage characteristics; p n junction; Transparent conducting oxide

Indexed keywords

CARRIER DIFFUSIONS; CHEMICAL SOLUTION DEPOSITION; E BEAM EVAPORATION; FILM NANOSTRUCTURES; FORWARD BIAS; GRAZING INCIDENCE X-RAY DIFFRACTION; HETEROEPITAXIAL; JUNCTION INTERFACES; OPTICAL AND ELECTRICAL PROPERTIES; OPTICAL TRANSPARENCY; P-N JUNCTION; REVERSE BIAS; REVERSE LEAKAGE CURRENT; SN-DOPED; THIN FILM DIODE; TRANSFER RESISTANCE; TRANSPARENT CONDUCTING OXIDE;

EID: 79952738343     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.01.255     Document Type: Article
Times cited : (27)

References (27)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.